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DE375-102N10A PDF预览

DE375-102N10A

更新时间: 2024-11-09 21:54:51
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
3页 159K
描述
RF Power MOSFET

DE375-102N10A 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:,
Reach Compliance Code:compliant风险等级:5.76
最高频带:VERY HIGH FREQUENCY BAND峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified子类别:FET General Purpose Power
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

DE375-102N10A 数据手册

 浏览型号DE375-102N10A的Datasheet PDF文件第2页浏览型号DE375-102N10A的Datasheet PDF文件第3页 
DE375-102N10A  
RF Power MOSFET  
N-Channel Enhancement Mode  
Low Qg and Rg  
VDSS  
ID25  
RDS(on)  
= 1000 V  
High dv/dt  
=
=
=
10 A  
1.2 Ω  
940 W  
Nanosecond Switching  
Symbol  
Test Conditions  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MΩ  
Continuous  
Maximum Ratings  
PDC  
1000  
1000  
±20  
±30  
10  
V
V
VDSS  
VDGR  
VGS  
VGSM  
ID25  
V
Transient  
V
Tc = 25°C  
A
Tc = 25°C, pulse width limited by TJM  
60  
A
IDM  
Tc = 25°C  
Tc = 25°C  
10  
A
IAR  
30  
mJ  
V/ns  
EAR  
I
S IDM, di/dt 100A/µs, VDD VDSS,  
5
Tj 150°C, RG = 0.2Ω  
dv/dt  
IS = 0  
>200 V/ns  
DRAIN  
940  
425  
W
W
PDC  
PDHS  
GATE  
Tc = 25°C  
Derate 4.4W/°C above 25°C  
Tc = 25°C  
4.5  
W
PDAMB  
RthJC  
0.16 C/W  
0.23 C/W  
SG1 SG2  
SD1  
SD2  
RthJHS  
Features  
Isolated Substrate  
Symbol  
Test Conditions  
Characteristic Values  
TJ = 25°C unless otherwise specified  
high isolation voltage (>2500V)  
excellent thermal transfer  
min.  
1000  
2.5  
typ.  
max.  
Increased temperature and power  
VGS = 0 V, ID = 3 ma  
VDS = VGS, ID = 4 ma  
VGS = ±20 VDC, VDS = 0  
VDS = 0.8 VDSS TJ = 25°C  
cycling capability  
V
V
VDSS  
VGS(th)  
IGSS  
IXYS advanced low Qg process  
Low gate charge and capacitances  
5.5  
easier to drive  
faster switching  
±100 nA  
50  
IDSS  
µA  
Low RDS(on)  
Very low insertion inductance (<2nH)  
V
GS = 0  
TJ = 125°C  
1
mA  
VGS = 15 V, ID = 0.5ID25  
No beryllium oxide (BeO) or other  
1.2  
RDS(on)  
Pulse test, t 300µS, duty cycle d 2%  
hazardous materials  
VDS = 15 V, ID = 0.5ID25, pulse test  
Advantages  
6
18  
S
gfs  
Optimized for RF and high speed  
-55  
+150 °C  
TJ  
switching at frequencies to 50MHz  
Easy to mount—no insulators needed  
High power density  
150  
°C  
TJM  
Tstg  
TL  
-55  
+150 °C  
1.6mm (0.063 in) from case for 10 s  
300  
3
°C  
g
Weight  

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