5秒后页面跳转
DE375-501N21A PDF预览

DE375-501N21A

更新时间: 2024-09-20 21:54:55
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
4页 173K
描述
RF Power MOSFET

DE375-501N21A 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:,
针数:6Reach Compliance Code:compliant
风险等级:5.75Base Number Matches:1

DE375-501N21A 数据手册

 浏览型号DE375-501N21A的Datasheet PDF文件第2页浏览型号DE375-501N21A的Datasheet PDF文件第3页浏览型号DE375-501N21A的Datasheet PDF文件第4页 
DE375-501N21A  
RF Power MOSFET  
N-Channel Enhancement Mode  
Low Qg and Rg  
VDSS  
ID25  
RDS(on)  
=
=
=
=
500 V  
25 A  
0.22 Ω  
940 W  
High dv/dt  
Nanosecond Switching  
50MHz Maximum Frequency  
Symbol  
Test Conditions  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MΩ  
Continuous  
Maximum Ratings  
PDC  
500  
500  
V
V
VDSS  
VDGR  
±20  
±30  
25  
V
V
VGS  
VGSM  
ID25  
IDM  
Transient  
Tc = 25°C  
A
Tc = 25°C, pulse width limited by TJM  
150  
21  
A
Tc = 25°C  
Tc = 25°C  
A
IAR  
30  
mJ  
V/ns  
EAR  
IS IDM, di/dt 100A/µs, VDD VDSS  
,
5
Tj 150°C, RG = 0.2Ω  
dv/dt  
IS = 0  
>200 V/ns  
DRAIN  
940  
425  
W
W
PDC  
GATE  
Tc = 25°C  
PDHS  
Derate 3.7W/°C above 25°C  
Tc = 25°C  
4.5  
W
PDAMB  
RthJC  
RthJHS  
0.16 C/W  
0.36 C/W  
SG1 SG2  
SD1  
SD2  
Features  
Isolated Substrate  
Symbol  
Test Conditions  
Characteristic Values  
TJ = 25°C unless otherwise specified  
high isolation voltage (>2500V)  
excellent thermal transfer  
min.  
500  
2.5  
typ.  
max.  
Increased temperature and power  
VGS = 0 V, ID = 3 ma  
VDS = VGS, ID = 4 ma  
VGS = ±20 VDC, VDS = 0  
VDS = 0.8 VDSS TJ = 25°C  
cycling capability  
V
V
VDSS  
VGS(th)  
IGSS  
IXYS advanced low Qg process  
Low gate charge and capacitances  
5.5  
easier to drive  
faster switching  
±100 nA  
50  
IDSS  
µA  
Low RDS(on)  
Very low insertion inductance (<2nH)  
V
GS = 0  
TJ = 125°C  
1
mA  
VGS = 15 V, ID = 0.5ID25  
No beryllium oxide (BeO) or other haz-  
0.22  
RDS(on)  
Pulse test, t 300µS, duty cycle d 2%  
ardous materials  
VDS = 15 V, ID = 0.5ID25, pulse test  
17  
S
gfs  
Advantages  
Optimized for RF and high speed  
-55  
-55  
+175 °C  
TJ  
switching at frequencies to 50MHz  
Easy to mount—no insulators needed  
High power density  
175  
°C  
TJM  
Tstg  
TL  
+175 °C  
1.6mm (0.063 in) from case for 10 s  
300  
3
°C  
g
Weight  

与DE375-501N21A相关器件

型号 品牌 获取价格 描述 数据表
DE375-501N21A_09 IXYS

获取价格

RF Power MOSFET
DE375-501N30A IXYS

获取价格

RF Power Field-Effect Transistor
DE37S364150LF AMPHENOL

获取价格

D Type Connector, 37 Contact(s), Female, 0.109 inch Pitch, Solder Terminal, Locking
DE3B3E2102JA2 MURATA

获取价格

Safety Standard Recognized Ceramic Capacitors
DE3B3E2102JA3 MURATA

获取价格

Safety Standard Recognized Ceramic Capacitors
DE3B3E2102KA2 MURATA

获取价格

Safety Standard Recognized Ceramic Capacitors
DE3B3E2102KA3 MURATA

获取价格

Safety Standard Recognized Ceramic Capacitors
DE3B3E2102MA2 MURATA

获取价格

Safety Standard Recognized Ceramic Capacitors
DE3B3E2102MA3 MURATA

获取价格

Safety Standard Recognized Ceramic Capacitors
DE3B3KH102JA2 MURATA

获取价格

Safety Standard Recognized Ceramic Capacitors