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DB3X314J0L PDF预览

DB3X314J0L

更新时间： 2024-10-01 20:08:27
品牌 Logo 应用领域
松下 - PANASONIC 光电二极管
页数 文件大小 规格书
4页 493K
描述
Mixer Diode, L Band, Silicon, TO-236AA, HALOGEN FREE AND ROHS COMPLIANT, MINI3-G3-B, SC-59A, 3 PIN

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DB3X314J0L 技术参数

是否Rohs认证： 符合生命周期：Transferred
包装说明：SC-59A, 3 PINReach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.60
风险等级：3.92Samacsys Description：DB3X314J0L, Schottky Diode, Switching 0.03A max, 30V 1ns Common Anode, Dual, 3-Pin, Mini3 G3 B
配置：COMMON ANODE, 2 ELEMENTS二极管元件材料：SILICON
二极管类型：MIXER DIODE最大正向电压 (VF)：0.4 V
频带：L BANDJEDEC-95代码：TO-236AA
JESD-30 代码：R-PDSO-G3元件数量：2
端子数量：3最高工作温度：85 °C
最低工作温度：-40 °C最大输出电流：0.03 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
最大重复峰值反向电压：30 V子类别：Rectifier Diodes
表面贴装：YES技术：SCHOTTKY
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

DB3X314J0L 数据手册

 浏览型号DB3X314J0L的Datasheet PDF文件第2页浏览型号DB3X314J0L的Datasheet PDF文件第3页浏览型号DB3X314J0L的Datasheet PDF文件第4页 
DB3X314J  
Silicon epitaxial planar type  
For high speed switching circuits  
Unit: mm  
Features  
Short reverse recovery time trr  
Small reverse current IR  
Halogen-free / RoHS compliant  
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  
ꢀMarking Symbol: 4Y  
ꢀBasic Part Number  
Dual DB2J314 (Common anode)  
Packaging  
DB3X314J0L Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  
Absolute Maximum Ratings Ta = 25°C  
1: Cathode-1  
2: Cathode-2  
3:Anode-1  
Anode-2  
Parameter  
Symbol  
VR  
Rating  
Unit  
V
Reverse voltage  
30  
30  
Panasonic  
JEITA  
Mini3-G3-B  
SC-59A  
Maximum peak reverse voltage  
VRM  
V
Code  
TO-236AA/SOT-23  
Single  
30  
Forward current  
IF  
mA  
mA  
1
1
Double *  
20  
3
Single  
150  
Peak forward current  
IFM  
Double *  
110  
Junction temperature  
Tj  
125  
°C  
°C  
°C  
Operating ambient temperature  
Storage temperature  
Topr  
–40 to +85  
–55 to +125  
1
2
T
stg  
Note) 1: Value of each diode in double diodes used.  
*
Electrical Characteristics Ta = 25°C±3°C  
Parameter  
Symbol  
Conditions  
Min  
Typ  
Max  
Unit  
VF1  
VF2  
IR  
IF = 1 mA  
IF = 30 mA  
VR = 30 V  
0.4  
1.0  
Forward voltage  
Reverse current  
V
300  
nA  
pF  
ns  
Terminal capacitance  
Ct  
VR = 10 V, f = 1 MHz  
IF = IR =10 mA, Irr = 1 mA, RL = 100 Ω  
1.5  
1.0  
1
Reverse recovery time *  
trr  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.  
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage  
of current from the operating equipment.  
3. Absolute frequency of input and output is 2 GHz  
1: trr measurement circuit  
*
Input Pulse  
Output Pulse  
trr  
Bias Application Unit (N-50BU)  
tp  
tr  
t
10%  
IF  
t
A
90%  
VR  
Irr = 1 mA  
tp = 2 µs  
tr = 0.35 ns  
δ = 0.05  
IF = 10 mA  
IR = 10 mA  
RL = 100 Ω  
Pulse Generator  
Wave Form Analyzer  
(SAS-8130)  
Ri = 50 Ω  
(PG-10N)  
Rs = 50 Ω  
Publication date: April 2013  
Ver. CED  
1
1234

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