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DB4 PDF预览

DB4

更新时间: 2024-10-01 09:59:59
品牌 Logo 应用领域
DIOTECH 二极管双向触发二极管
页数 文件大小 规格书
3页 1184K
描述
BIDIRECTIONAL TRIGGER DIODE

DB4 数据手册

 浏览型号DB4的Datasheet PDF文件第2页浏览型号DB4的Datasheet PDF文件第3页 
DB4  
BIDIRECTIONAL TRIGGER DIODE  
DO-35  
Features  
VBO : 40V  
1.0 2(26.0)  
MIN.  
Breakover voltage range : 35 to 45V  
0.079(2.0)  
MAX  
0.165 (4.2)  
MAX  
Applications  
1.0 2(26.0)  
MIN.  
Functioning as a trigger diode with a fixed voltage  
reference, the DB4 can be used in conjunction  
with triacs for simplified gate control circuits or as  
a starting element in fluorescent lamp ballasts.  
0.020(0.52)  
TYP  
All Dimensions in mm  
Absolute Maximum Ratings  
(Limiting values)  
Parameter  
Symbol  
ITRM  
Tj  
Value  
2
Unit  
A
Repetitive peak on-state current (tp=20μ s F=120 Hz)  
Operating junction temperature range  
Storage temperature range  
-40 ~ +125  
-40 ~ +125  
Tstg  
Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the  
recommended operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may  
affect device reliability.  
Electrical Characteristics  
(Tj=25unless otherwise specified)  
Parameter  
Symbol  
VBO  
Test Conditions  
Value  
35  
Unit  
V
Breakover voltage*  
C=22nF**  
C=22nF**  
MIN.  
TYP.  
MAX.  
40  
45  
Breakover voltage symmetry  
Dynamic breakover voltage*  
Output voltage*  
|VBO1-VBO2  
|
MAX.  
MIN.  
±3  
5
V
V
V  
VO  
IBO  
tr  
VBO and VF at 10mA  
see diagram 2(R=20Ω )  
C=22nF**  
MIN.  
5
V
Breakover current*  
Rise time*  
MAX.  
MAX.  
MAX.  
50  
2
μ A  
μ s  
μ A  
see diagram 3  
Leakage current*  
IR  
VR=0.5VBO max  
10  
*Applicable to both forward and reverse directions.  
**Connected in parallel to the device.  

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