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DB4 PDF预览

DB4

更新时间: 2024-01-31 00:01:08
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2页 138K
描述
Silicon Bidirectional Diacs

DB4 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:DO-35
包装说明:DO-35G, 2 PIN针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.30.00.80风险等级:5.53
Is Samacsys:N最大转折电压:45 V
最小转折电压:35 V外壳连接:ISOLATED
配置:SINGLEJEDEC-95代码:DO-35
JESD-30 代码:O-XALF-W2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:UNSPECIFIED
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
子类别:DIACs表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:DIACBase Number Matches:1

DB4 数据手册

 浏览型号DB4的Datasheet PDF文件第2页 
TIGER ELECTRONIC CO.,LTD  
DB3/DB4  
Silicon Bidirectional Diacs  
VOLTAGE RANGE: 28-45 V  
DO-35  
Features  
The three layer,two termnal,axial lead,hermetically  
1111sealed diacs are designed specificallyfor triggering  
1111thyristors.They demonstrate low breakover current at  
1111breakover voltage as theywithstand peak pulse  
1111current,The breakover symmetry is within three  
1111volts(DB3,DB4). These diacs are intended for use in  
CCCthyrisitors phase control,circuits for lamp dimming,  
FFFI universal motor speed control,and heat control.  
Dimensions in inches and (millimeters)  
ABSOLUTE RATINGS  
Parameters  
Symbols  
DB3,DB4  
UNITS  
Power dissipation on printed  
TA=50oC circuit (L=10mm)  
Pc  
150.0  
2.0  
mW  
A
Repetitive peak on-state  
current  
tp=20  
f=120Hz  
S
ITRM  
oC  
oC  
Operating junction temperature  
Storage temperature  
TJ  
-40--- +125  
-40--- +125  
TSTG  
ELECTRICAL CHARACTERISTICS  
Parameters  
Test Conditions  
DB3  
DB4  
UNITS  
V
Min  
Typ  
Max  
28  
32  
36  
35  
40  
45  
C=22nf(NOTE2)  
Breakover voltage (NOTE1)  
VBO  
See FIG.1  
I+VBO I-  
I-VBOI  
C=22nf(NOTE2)  
See FIG.1  
±3.0  
V
V
Breakover voltage symmetry  
Max  
Min  
I=(IBO to IF=10mA)  
See FIG.1  
Dynamic breakover voltage (NOTE1)  
Output voltage (NOTE1)  
I± VI  
5.0  
5.0  
See FIG.2  
Vo  
IBO  
tr  
Min  
Max  
Typ  
Max  
V
A
S
A
C=22nf(NOTE2)  
See FIG.3  
100.0  
1.5  
Breakover current (NOTE1)  
Rise time (NOTE1)  
VR=0.5 VBO  
See FIG.1  
10.0  
Leakage current (NOTE1)  
IR  
NOTE: 1.Electrical characteristics applicable in both forw ard and reverse dirctions.  
2.Connected in parallel w ith the devices  

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