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DB3X407K0L PDF预览

DB3X407K0L

更新时间: 2024-10-01 19:54:39
品牌 Logo 应用领域
松下 - PANASONIC 光电二极管
页数 文件大小 规格书
4页 519K
描述
Mixer Diode, Ultra High Frequency, Silicon, TO-236AA, HALOGEN FREE AND ROHS COMPLIANT, MINI3-G3-B, SC-59A, 3 PIN

DB3X407K0L 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:SC-59A, 3 PINReach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.60
风险等级:3.88配置:SINGLE
二极管元件材料:SILICON二极管类型:MIXER DIODE
最大正向电压 (VF):0.55 V频带:ULTRA HIGH FREQUENCY
JEDEC-95代码:TO-236AAJESD-30 代码:R-PDSO-G3
湿度敏感等级:1最大非重复峰值正向电流:2 A
元件数量:1端子数量:3
最高工作温度:85 °C最低工作温度:-40 °C
最大输出电流:0.5 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:40 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

DB3X407K0L 数据手册

 浏览型号DB3X407K0L的Datasheet PDF文件第2页浏览型号DB3X407K0L的Datasheet PDF文件第3页浏览型号DB3X407K0L的Datasheet PDF文件第4页 
DB3X407K  
Silicon epitaxial planar type  
Unit: mm  
For high frequency rectication  
Features  
Short reverse recovery time trr  
Low forward voltage VF  
Halogen-free / RoHS compliant  
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  
Marking Symbol: 3J  
Packaging  
DB3X407K0L Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  
1:Anode  
2: N.C.  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Symbol  
VR  
Rating  
Unit  
V
3: Cathode  
Reverse voltage  
40  
Panasonic  
Mini3-G3-B  
Maximum peak reverse voltage  
Forward current (Average)  
VRM  
IF(AV)  
IFSM  
Tj  
40  
500  
V
JEITA  
Code  
SC-59A  
TO-236AA/SOT-23  
mA  
A
1
Non-repetitive peak forward surge current *  
2
3
Junction temperature  
125  
°C  
°C  
°C  
Operating ambient temperature  
Storage temperature  
Topr  
–40 to +85  
–55 to +125  
T
stg  
Note) 1: 50 Hz sine wave 1 cycle (Non-repetitive peak current)  
*
1
2
Electrical Characteristics Ta = 25°C±3°C  
Parameter  
Symbol  
Conditions  
Min  
Typ  
Max  
Unit  
V
Forward voltage  
Reverse current  
VF  
IR  
IF = 500 mA  
VR = 35 V  
0.55  
100  
mA  
pF  
Terminal capacitance  
Ct  
VR = 10 V, f = 1 MHz  
10.5  
3.6  
IF = IR = 100 mA, Irr = 0.1 × IR ,  
RL = 100 Ω  
1
Reverse recovery time *  
trr  
ns  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.  
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage  
of current from the operating equipment.  
3. Absolute frequency of input and output is 400 MHz  
1: trr measurement circuit  
*
Input Pulse  
Output Pulse  
trr  
Bias Application Unit (N-50BU)  
tp  
tr  
t
10%  
IF  
t
A
90%  
VR  
I
rr = 0.1 × IR  
tp = 2 µs  
tr = 0.35 ns  
δ = 0.05  
IF = 100 mA  
IR = 100 mA  
RL = 100 Ω  
Pulse Generator  
Wave Form Analyzer  
(SAS-8130)  
Ri = 50 Ω  
(PG-10N)  
Rs = 50 Ω  
Publication date: May 2013  
Ver. CED  
1

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