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DB3X501K PDF预览

DB3X501K

更新时间: 2024-10-01 20:04:11
品牌 Logo 应用领域
松下 - PANASONIC 光电二极管
页数 文件大小 规格书
4页 368K
描述
Mixer Diode, HALOGEN FREE AND ROHS COMPLIANT, MINI3-G3-B, 3 PIN

DB3X501K 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.60
风险等级:5.75配置:SINGLE
二极管类型:MIXER DIODE最大正向电压 (VF):0.36 V
JESD-30 代码:R-PDSO-G3最大非重复峰值正向电流:1 A
元件数量:1端子数量:3
最高工作温度:150 °C最大输出电流:0.2 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:50 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

DB3X501K 数据手册

 浏览型号DB3X501K的Datasheet PDF文件第2页浏览型号DB3X501K的Datasheet PDF文件第3页浏览型号DB3X501K的Datasheet PDF文件第4页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
DB3X501K  
Silicon epitaxial planar type  
For high speed switching  
DB2J501 in Mini3 type package  
Features  
Short reverse recovery time trr  
Package  
Code  
Low terminal capacitance Ct  
Mini3-G3-B  
Pin Name  
1:Anode  
Contributes to miniaturization of sets, reduction of component count.  
Eco-friendly Halogen-free package  
2: N.C.  
Packaging  
3: Cathode  
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  
Marking Symbol: 4H  
Absolute Maximum Ratings Ta = 25°C  
Internal Connection  
Parameter  
Symbol  
VR  
Rating  
Unit  
V
3
Reverse voltage  
50  
Repetitive peak reverse voltage  
Peak forward current  
VRRM  
IFM  
50  
300  
V
mA  
mA  
A
Forward current (Average)  
IF(AV)  
IFSM  
Tj  
200  
1
2
Non-repetitive peak forward surge current *  
Junction temperature  
1
125  
°C  
°C  
Storage temperature  
T
stg  
–55 to +125  
Note) : 50 Hz sine wave 1 cycle (Non-repetitive peak current)  
*
Electrical Characteristics Ta = 25°C±3°C  
Parameter  
Symbol  
VF1  
VF2  
IR  
Conditions  
Min  
Typ  
Max  
0.36  
0.55  
200  
Unit  
IF = 30 mA  
IF = 200 mA  
VR = 50 V  
Forward voltage  
Reverse current  
V
mA  
Terminal capacitance  
Ct  
VR = 10 V, f = 1 MHz  
4
pF  
IF = IR = 100 mA, Irr = 10 mA,  
Reverse recovery time *  
trr  
1.6  
ns  
RL = 100 Ω  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.  
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage  
of current from the operating equipment.  
3. Absolute frequency of input and output is 1 GHz  
: trr measurement circuit  
*
Input Pulse  
Output Pulse  
trr  
Bias Application Unit (N-50BU)  
tp  
tr  
t
10%  
IF  
t
A
90%  
VR  
Irr = 10 mA  
tp = 2 µs  
tr = 0.35 ns  
δ = 0.05  
IF = 100 mA  
IR = 100 mA  
RL = 100 Ω  
Pulse Generator  
Wave Form Analyzer  
(SAS-8130)  
Ri = 50 Ω  
(PG-10N)  
Rs = 50 Ω  
Publication date: March 2010  
ZKH00350BED  
1

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