Datasheet > DB4

DB4

更新时间： 2024-10-01 12:20:39

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		数据判读及分析中心
页数	文件大小	规格书
2页	323K
描述
SILICON BIDIRECTIONAL DIACS VOLTAGE RANGE: 28-45 V

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中文翻译

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DB4 数据手册

DB3.DB4

GALAXY ELECTRICAL

VOLTAGE RANGE: 28-45 V

SILICON BIDIRECTIONAL DIACS

FEATURES

The three layer,two termnal,axial lead,hermetically

1111sealed diacs are designed specificallyfor triggering

1111thyristors.They demonstrate low breakover current at

1111breakover voltage as theywithstand peak pulse

1111current,The breakover symmetry is within three

1111volts(DB3,DB4). These diacs are intended for use in

CCCthyrisitors phase control,circuits for lamp dimming,

FFFI universal motor speed control,and heat control.

DO-35(GLASS)

Dimensions in millimeters

ABSOLUTE RATINGS

Parameters

Symbols

DB3,DB4

UNITS

Power dissipation on printed

T_A=50^oC circuit (L=10mm)

150.0

2.0

Repetitive peak on-state

current

tp=20

f=120Hz

I_TRM

^oC

Operating junction temperature

Storage temperature

T_J

-40--- +125

T_STG

ELECTRICAL CHARACTERISTICS

Parameters

Test Conditions

Min

DB3

DB4

UNITS

C=22nf(NOTE2)

Breakover voltage (NOTE1)

V_BO

Typ

See FIG.1

Max

I+V_BOI-

I-V_BOI

C=22nf(NOTE2)

See FIG.1

±3.0

Breakover voltage symmetry

Max

Min

I=(I_BOto I_F=10mA)

See FIG.1

Dynamic breakover voltage (NOTE1)

Output voltage (NOTE1)

I± VI

5.0

See FIG.2

V_o

I_BO

t_r

Min

Max

Typ

Max

C=22nf(NOTE2)

See FIG.3

100.0

1.5

Breakover current (NOTE1)

Rise time (NOTE1)

V_R=0.5 V_BO

See FIG.1

10.0

Leakage current (NOTE1)

I_R

www.galaxycn.com

NOTE: 1.Electrical characteristics applicable in both forw ard and reverse dirctions.

2.Connected in parallel w ith the devices

Document Number 0283003

BLGALAXY ELECTRICAL

中文翻译

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