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DAP222

更新时间: 2024-02-01 10:34:09
品牌 Logo 应用领域
安森美 - ONSEMI 二极管开关
页数 文件大小 规格书
6页 94K
描述
COMMON ANODE DUAL SWITCHING DIODE SURFACE MOUNT

DAP222 技术参数

生命周期:ActiveReach Compliance Code:compliant
Factory Lead Time:12 weeks风险等级:1.58
其他特性:HIGH RELIABILITY应用:GENERAL PURPOSE
配置:COMMON ANODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.2 V
JESD-30 代码:R-PDSO-F3元件数量:2
相数:1端子数量:3
最高工作温度:150 °C最大输出电流:0.05 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE最大功率耗散:0.15 W
参考标准:AEC-Q101最大重复峰值反向电压:80 V
最大反向电流:0.1 µA最大反向恢复时间:0.004 µs
反向测试电压:70 V表面贴装:YES
端子形式:FLAT端子位置:DUAL

DAP222 数据手册

 浏览型号DAP222的Datasheet PDF文件第2页浏览型号DAP222的Datasheet PDF文件第3页浏览型号DAP222的Datasheet PDF文件第4页浏览型号DAP222的Datasheet PDF文件第5页浏览型号DAP222的Datasheet PDF文件第6页 
Order this document  
by DAP222/D  
SEMICONDUCTOR TECHNICAL DATA  
This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra  
high speed switching applications. This device is housed in the SOT–416/SC–90  
package which is designed for low power surface mount applications, where board  
space is at a premium.  
SOT–416/SC–90 PACKAGE  
COMMON ANODE  
DUAL SWITCHING DIODE  
SURFACE MOUNT  
Fast t  
rr  
Low C  
D
Available in 8 mm Tape and Reel  
3
2
1
CASE 463–01, STYLE 4  
SOT–416/SC–90  
MAXIMUM RATINGS (T = 25°C)  
A
Rating  
Reverse Voltage  
Symbol  
Value  
80  
Unit  
Vdc  
ANODE  
3
V
R
Peak Reverse Voltage  
Forward Current  
V
80  
Vdc  
RM  
I
100  
300  
2.0  
mAdc  
mAdc  
Adc  
F
Peak Forward Current  
Peak Forward Surge Current  
I
FM  
I
(1)  
FSM  
1
2
DEVICE MARKING  
CATHODE  
DAP222 = P9  
THERMAL CHARACTERISTICS  
Rating  
Symbol  
Max  
150  
Unit  
mW  
°C  
Power Dissipation  
P
D
Junction Temperature  
Storage Temperature  
T
J
150  
T
stg  
55 ~ +150  
°C  
ELECTRICAL CHARACTERISTICS (T = 25°C)  
A
Characteristic  
Symbol  
Condition  
= 70 V  
Min  
Max  
0.1  
1.2  
Unit  
µAdc  
Vdc  
Vdc  
pF  
Reverse Voltage Leakage Current  
Forward Voltage  
I
R
V
R
V
I
= 100 mA  
F
R
D
F
Reverse Breakdown Voltage  
Diode Capacitance  
V
C
I
= 100 µA  
80  
R
V
= 6.0 V, f = 1.0 MHz  
3.5  
4.0  
R
Reverse Recovery Time  
1. t = 1 µS  
t (2)  
rr  
I
F
= 5.0 mA, V = 6.0 V, R = 100 , I = 0.1 I  
rr R  
ns  
R
L
2. t Test Circuit on following page.  
rr  
Thermal Clad is a trademark of the Bergquist Company  
REV 1  
Motorola, Inc. 1996  

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