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DAP222T1G PDF预览

DAP222T1G

更新时间: 2024-09-23 22:29:19
品牌 Logo 应用领域
安森美 - ONSEMI 整流二极管开关测试光电二极管
页数 文件大小 规格书
6页 58K
描述
Common Anode Silicon Dual Switching Diodes

DAP222T1G 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:SC-75包装说明:R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
Factory Lead Time:1 week风险等级:1.03
Is Samacsys:N应用:GENERAL PURPOSE
最小击穿电压:80 V配置:COMMON ANODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.2 VJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:2 A元件数量:2
相数:1端子数量:3
最高工作温度:150 °C最大输出电流:0.1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
最大功率耗散:0.15 W认证状态:Not Qualified
最大重复峰值反向电压:80 V最大反向电流:0.1 µA
最大反向恢复时间:0.004 µs反向测试电压:70 V
子类别:Rectifier Diodes表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
Base Number Matches:1

DAP222T1G 数据手册

 浏览型号DAP222T1G的Datasheet PDF文件第2页浏览型号DAP222T1G的Datasheet PDF文件第3页浏览型号DAP222T1G的Datasheet PDF文件第4页浏览型号DAP222T1G的Datasheet PDF文件第5页浏览型号DAP222T1G的Datasheet PDF文件第6页 
DAP222, DAP202U  
Preferred Device  
Common Anode Silicon  
Dual Switching Diodes  
These Common Anode Silicon Epitaxial Planar Dual Diodes are  
designed for use in ultra high speed switching applications. The  
DAP222 device is housed in the SC−75/SOT−416 package which is  
designed for low power surface mount applications, where board  
space is at a premium. The DAP202U device is housed in the  
SC−70/SOT−323package.  
http://onsemi.com  
ANODE  
3
Features  
Fast t  
rr  
Low C  
D
Available in 8 mm Tape and Reel  
Pb−Free Package is Available  
1
2
CATHODE  
MAXIMUM RATINGS (T = 25°C)  
A
MARKING  
DIAGRAMS  
Rating  
Reverse Voltage  
Symbol  
Value  
80  
Unit  
Vdc  
3
V
R
Peak Reverse Voltage  
Forward Current  
V
80  
Vdc  
RM  
2
1
I
100  
300  
2.0  
mAdc  
mAdc  
Adc  
P9  
F
SC−75  
CASE 463  
STYLE 3  
Peak Forward Current  
Peak Forward Surge Current  
I
FM  
I
(1)  
FSM  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits  
are exceeded, device functional operation is not implied, damage may occur  
and reliability may be affected.  
3
1
THERMAL CHARACTERISTICS  
NB  
2
Rating  
Power Dissipation  
Symbol  
Max  
150  
Unit  
mW  
°C  
SC−70  
CASE 419  
P
D
Junction Temperature  
Storage Temperature  
T
J
150  
T
stg  
55 ~ +150  
°C  
ORDERING INFORMATION  
Device  
Package  
SC−75  
SC−70  
SC−75  
Shipping  
DAP222  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
DAP202U  
DAP222T1  
DAP222T1G  
SC−75  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
April, 2004 − Rev. 4  
DAP222/D  

DAP222T1G 替代型号

型号 品牌 替代类型 描述 数据表
DAP222T1 ONSEMI

完全替代

Common Anode Silicon Dual Switching Diodes
DAP222TL ROHM

功能相似

Switching Diode

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DAP236U ROHM

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DAP236U_11 ROHM

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Band Switching Diode
DAP236UT107 ROHM

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