Datasheet > D882(TO-251)

D882(TO-251)

更新时间： 2024-10-05 17:00:39

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	296K
描述
30V,3A,Medium Power NPN Bipolar Transistor

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D882(TO-251) 数据手册

Product Specification

NPN Silicon Epitaxial Planar Transistor

D882

FEATURES



Low saturation voltage.

Excellent h_FElinearity and high h_FE.

Less cramping space required due to small and thin

Package and reducing the trouble for attachment to a

radiator

APPLICATIONS



Power amplifier application.

TO-251

TO-252

Ordering Information

Part Number

Package

TO-251

TO-252

Shipping

Marking Code

D882I

80 pcs / Tube

D882

80 pcs/ Tube or 2500 pcs / Tape & Reel

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

V_CBO

V_CEO

V_EBO

I_C

Collector Current -Continuous

Collector Dissipation

P_C

℃

Junction and Storage Temperature

T_j,T_stg

-55 to +150

STM0199A

www.gmesemi.com

12 3 4 5

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