Datasheet > D882GR(SOT-89-3L)

D882GR(SOT-89-3L)

更新时间： 2024-01-17 03:28:57

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
1页	690K
描述
Transistor,

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D882GR(SOT-89-3L) 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

D882GR(SOT-89-3L) 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-89-3L Plastic-Encapsulate Transistors

D882 TRANSISTOR (NPN)

SOT-89-3L

1. ^BASE

FEATURES

Power dissipation

2. ^COLLECTOR

3. ^EMITTER

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

P_C

0.5

℃

T_J

150

-55~150

T_stg

Storage Temperature

ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

I_C= 100μA, I_E=0

I_C= 10mA, I_B=0

I_E= 100μA, I_C=0

V_CB= 40V, I_E=0

V_CE= 30V, I_B=0

V_EB= 6V, I_C=0

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

µA

Collector cut-off current

I_CEO

Emitter cut-off current

I_EBO

h_FE(1)

V_CE=2V, I_C= 1A

V_CE=2V, I_C= 100mA

I_C= 2A, I_B= 0.2 A

400

DC current gain

h_FE(2)

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE(sat)

V_BE(sat)

0.5

1.5

_CE= 5V , Ic=0.1A

Transition frequency

f_T

MHz

f =10MHz

CLASSIFICATION OF h_FE(1)

200-400

Rank

60-120

100-200

160-320

Range

A,Jun,2011

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