Datasheet > D882H

D882H

更新时间： 2023-12-06 20:00:35

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	1714K
描述
SOT-89-3L

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中文翻译

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数据手册

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D882H 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-89-3L Plastic-Encapsulate Transistors

D882H

TRANSISTOR (NPN)

SOT-89-3L

FEATURE

 Low V_CE(sat)

 Large current capacity

1. BASE

2. COLLECTOR

3. EMITTER

MARKING

D882H

Solid dot = Green molding compound device.

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

500

P_C

Collector Power Dissipation

℃/W

℃

R_ΘJA

R_ΘJC

T_J,T_stg

Thermal Resistance from Junction to Ambient

Thermal Resistance from Junction to Case

Operation Junction and Storage Temperature Range

250

-55～+150

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBO

I_C=100µA, I_E=0

I_C=10mA, I_B=0

I_E=100µA, I_C=0

V_CB=40V, I_E=0

V_CE=30V, I_B=0

V_EB=6V, I_C=0

V_(BR)CEO

V_(BR)EBO

I_CBO

µA

Collector cut-off current

I_CEO

Emitter cut-off current

I_EBO

DC current gain

h_FE

V_CE=2V, I_C=1A

I_C=2A, I_B=0.2A

V_CE=5V,I_C=0.1A,f=10MHz

400

0.5

1.5

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

V_CE(sat)

V_BE(sat)

f_T

MHz

CLASSIFICATION of h_FE

Rank

Range

60-120

100-200

160-320

200-400

www.jscj-elec.com

Rev. - 2.3

12 3 4

中文翻译

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