Datasheet > D882R(TO-252-2)

D882R(TO-252-2)

更新时间： 2024-02-09 04:33:47

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
1页	37K
描述
Transistor,

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中文翻译

获取价格

数据手册

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D882R(TO-252-2) 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-251/252 Plastic-Encapsulate Transistors

6. 50¡ À0. 10

5. 30¡ À0. 05

2. 30¡ À0. 05

0. 51¡ À0. 03

TO-251

TO-252-2

D882 TRANSISTOR (NPN)

5¡

5¡ ã

0. 80¡ À0. 05

FEATURES

0. 60¡ À0. 05

1. BASE

2. 30¡ À0. 05

1. 20

0. 51¡ À0. 03

Power dissipation

P_CM

1 2 3

2. COLLECTOR

3. EMITTER

6. 50¡ À0. 15

2. 30¡ À0. 10

5. 30¡ À0. 10

1.25 W (Tamb=25℃)

0. 51¡ À0. 05

1. 20

0. 51¡ À0. 10

0¡ «0. 10

Collector current

I_CM:

5¡

0. 80¡ À0. 10

0. 60¡ À0. 10

2. 30¡ À0. 10

0¡

9«¡

Collector-base voltage

V_(BR)CBO40

0. 51

1 2 3

Operating and storage junction temperature range

T_J, T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V(BR)_CBO

V(BR)_CEO

V(BR)_EBO

I_CBO

Test conditions

Ic= 100µA, I_E=0

Ic= 10 mA, I_B=0

I_E= 100µA, I_C=0

V_CB= 40V, I_E=0

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

µA

I_CEO

V_CE= 30V, I_B=0

Collector cut-off current

I_EBO

V_EB= 6V, I_C=0

Emitter cut-off current

h_FE(1)

V_CE= 2V, IC= 1A

V_CE= 2V, I_C= 100mA

I_C= 2A, I_B= 0.2 A

400

DC current gain

h_FE(2)

V_{CE (sat)}

V_{BE (sat)}

0.5

1.5

Collector-emitter saturation voltage

Base-emitter saturation voltage

_CE= 5V, Ic=0.1A

f_T

MHz

Transition frequency

f =10MHz

CLASSIFICATION OF h_FE(1)

Rank

200-400

60-120

100-200

160-320

Range

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