Datasheet > D3S8M

D3S8M

更新时间： 2024-10-29 12:57:15

品牌	Logo	应用领域
森美特 - SUNMATE		/
页数	文件大小	规格书
2页	376K
描述
3A Plug-in Schottky diode 80V DO-201 series

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中文翻译

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数据手册

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D3S8M 数据手册

D3S2M - D3S10M

SCHOTTKY BARRIER RECTIFIER DIODES

VOLTAGE RANGE: 20 - 100V

CURRENT: 3.0 A

Features

Schottky Barrier Chip

Guard Ring Die Construction for

Transient Protection

High Current Capability

Low Power Loss, High Efficiency

High Surge Current Capability

For Use in Low Voltage, High Frequency

Inverters, Free Wheeling, and Polarity

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Protection Applications

Mechanical Data

DO-201AD

Case: DO-201AD, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: Cathode Band

Weight: 1.2 grams (approx.)

Mounting Position: Any

Dim

Min

25.40

7.20

1.20

4.80

Max

9.50

1.30

5.30

All Dimensions in mm

Marking: Type Number

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol D3S2M D3S3M D3S4M D3S5M D3S6M D3S8M D3S10M Unit

RRM

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RWM

100

R(RMS)

RMS Reverse Voltage

Average Rectified Output Current

(Note 1)

@T_L= 95°C

3.0

Non-Repetitive Peak Forward Surge Current 8.3ms

Single half sine-wave superimposed on rated load

(JEDEC Method)

FSM

Forward Voltage

@I_F= 3.0A

0.50

0.75

0.85

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 100°C

0.5

Typical Junction Capacitance (Note 2)

Typical Thermal Resistance (Note 1)

Operating and Storage Temperature Range

250

°C/W

°C

R^ꢀ

STG

T, T

-65 to +150

Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

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