Datasheet > D3SB60

D3SB60

更新时间： 2024-10-30 14:53:39

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EIC		/
页数	文件大小	规格书
2页	180K
描述
Bridge Rectifiers

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数据手册

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D3SB60 数据手册

www.eicsemi.com

SILICON BRIDGE RECTIFIERS

D3SB10 - D3SB80

RBV4

0.150 (3.8)

PRV : 100 - 800 Volts

Io : 4.0 Amperes

0.134 (3.4)

0.996 (25.3)

0.189 (4.8)

0.972 (24.7)

0.173 (4.4)

FEATURES :

* High current capability

* High surge current capability

* High reliability

* Low reverse current

* Low forward voltage drop

* Ideal for printed circuit board

* Very good heat dissipation

* Pb / RoHS Free

~ ~

0.075 (1.9)

0.060 (1.5)

0.043 (1.1)

0.035 (0.9)

0.114 (2.9)

0.098 (2.5)

0.303 (7.7)

0.287 (7.3)

0.032 (0.8)

0.043 (1.1)

MECHANICAL DATA :

* Case : Reliable low cost construction

utilizing molded plastic technique

* Epoxy : UL94V-O rate flame retardant

* Terminals : Plated lead solderable per

MIL-STD-202, Method 208 guaranteed

* Polarity : Polarity symbols marked on case

* Mounting position : Any

Dimensions in inches and (millimeters)

* Weight : 4.28 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25 °C ambient temperature unless otherwise specifie.

Single phase, half wave, 60 Hz, resistive or inductive load

For capacitive load, derate current by 20%

D3S

B10

D3S

B20

D3S

B40

D3S

B60

D3S

B80

RATING

Maximum Reverse Voltage

SYMBOL

UNIT

VRM

I^F(AV)

I^FSM

100

200

400

4.0

600

800

Maximum Average Forward Current Tc = 25°C

Maximum Peak Forward Surge Current

120

1.05

Maximum Forward Voltage per Diode at I^F= 2.0 A

Maximum Reverse Current at Reverse Voltage

Maximum Reverse Current at Reverse Voltage Ta = 100 °C

Operating Junction Temperature Range

I^R

μA

°C

I^R(H)

T^J

100

- 40 to + 150

Storage Temperature Range

T^STG

Page 1 of 2

Rev. 02 : March 25, 2005

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