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D3SB20 PDF预览

D3SB20

更新时间: 2024-10-30 14:53:39
品牌 Logo 应用领域
EIC /
页数 文件大小 规格书
2页 180K
描述
Bridge Rectifiers

D3SB20 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PSFM-T4
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.76其他特性:HIGH RELIABILITY
最小击穿电压:200 V配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
JESD-30 代码:R-PSFM-T4最大非重复峰值正向电流:120 A
元件数量:4相数:1
端子数量:4最高工作温度:150 °C
最低工作温度:-40 °C最大输出电流:4 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
参考标准:TS 16949最大重复峰值反向电压:200 V
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

D3SB20 数据手册

 浏览型号D3SB20的Datasheet PDF文件第2页 
www.eicsemi.com  
SILICON BRIDGE RECTIFIERS  
D3SB10 - D3SB80  
RBV4  
0.150 (3.8)  
PRV : 100 - 800 Volts  
Io : 4.0 Amperes  
0.134 (3.4)  
C3  
0.996 (25.3)  
0.189 (4.8)  
0.972 (24.7)  
0.173 (4.4)  
FEATURES :  
* High current capability  
* High surge current capability  
* High reliability  
* Low reverse current  
* Low forward voltage drop  
* Ideal for printed circuit board  
* Very good heat dissipation  
* Pb / RoHS Free  
+
~ ~  
0.075 (1.9)  
0.060 (1.5)  
0.043 (1.1)  
0.035 (0.9)  
0.114 (2.9)  
0.098 (2.5)  
0.303 (7.7)  
0.287 (7.3)  
0.032 (0.8)  
0.043 (1.1)  
MECHANICAL DATA :  
* Case : Reliable low cost construction  
utilizing molded plastic technique  
* Epoxy : UL94V-O rate flame retardant  
* Terminals : Plated lead solderable per  
MIL-STD-202, Method 208 guaranteed  
* Polarity : Polarity symbols marked on case  
* Mounting position : Any  
Dimensions in inches and (millimeters)  
* Weight : 4.28 grams  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25 °C ambient temperature unless otherwise specifie.  
Single phase, half wave, 60 Hz, resistive or inductive load  
For capacitive load, derate current by 20%  
D3S  
B10  
D3S  
B20  
D3S  
B40  
D3S  
B60  
D3S  
B80  
RATING  
Maximum Reverse Voltage  
SYMBOL  
UNIT  
VRM  
IF(AV)  
IFSM  
VF  
100  
200  
400  
4.0  
600  
800  
V
A
Maximum Average Forward Current Tc = 25°C  
Maximum Peak Forward Surge Current  
120  
1.05  
10  
A
Maximum Forward Voltage per Diode at IF = 2.0 A  
Maximum Reverse Current at Reverse Voltage  
Maximum Reverse Current at Reverse Voltage Ta = 100 °C  
Operating Junction Temperature Range  
V
IR  
μA  
μA  
°C  
°C  
IR(H)  
TJ  
100  
- 40 to + 150  
- 40 to + 150  
Storage Temperature Range  
TSTG  
Page 1 of 2  
Rev. 02 : March 25, 2005  

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