www.eicsemi.com
SILICON BRIDGE RECTIFIERS
D3SB10 - D3SB80
RBV4
0.150 (3.8)
PRV : 100 - 800 Volts
Io : 4.0 Amperes
0.134 (3.4)
C3
0.996 (25.3)
0.189 (4.8)
0.972 (24.7)
0.173 (4.4)
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Ideal for printed circuit board
* Very good heat dissipation
* Pb / RoHS Free
+
~ ~
0.075 (1.9)
0.060 (1.5)
0.043 (1.1)
0.035 (0.9)
0.114 (2.9)
0.098 (2.5)
0.303 (7.7)
0.287 (7.3)
0.032 (0.8)
0.043 (1.1)
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
Dimensions in inches and (millimeters)
* Weight : 4.28 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specifie.
Single phase, half wave, 60 Hz, resistive or inductive load
For capacitive load, derate current by 20%
D3S
B10
D3S
B20
D3S
B40
D3S
B60
D3S
B80
RATING
Maximum Reverse Voltage
SYMBOL
UNIT
VRM
IF(AV)
IFSM
VF
100
200
400
4.0
600
800
V
A
Maximum Average Forward Current Tc = 25°C
Maximum Peak Forward Surge Current
120
1.05
10
A
Maximum Forward Voltage per Diode at IF = 2.0 A
Maximum Reverse Current at Reverse Voltage
Maximum Reverse Current at Reverse Voltage Ta = 100 °C
Operating Junction Temperature Range
V
IR
μA
μA
°C
°C
IR(H)
TJ
100
- 40 to + 150
- 40 to + 150
Storage Temperature Range
TSTG
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Rev. 02 : March 25, 2005