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D3SB10 PDF预览

D3SB10

更新时间: 2023-12-06 20:03:27
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EIC /
页数 文件大小 规格书
2页 180K
描述
Bridge Rectifiers

D3SB10 数据手册

 浏览型号D3SB10的Datasheet PDF文件第2页 
www.eicsemi.com  
SILICON BRIDGE RECTIFIERS  
D3SB10 - D3SB80  
RBV4  
0.150 (3.8)  
PRV : 100 - 800 Volts  
Io : 4.0 Amperes  
0.134 (3.4)  
C3  
0.996 (25.3)  
0.189 (4.8)  
0.972 (24.7)  
0.173 (4.4)  
FEATURES :  
* High current capability  
* High surge current capability  
* High reliability  
* Low reverse current  
* Low forward voltage drop  
* Ideal for printed circuit board  
* Very good heat dissipation  
* Pb / RoHS Free  
+
~ ~  
0.075 (1.9)  
0.060 (1.5)  
0.043 (1.1)  
0.035 (0.9)  
0.114 (2.9)  
0.098 (2.5)  
0.303 (7.7)  
0.287 (7.3)  
0.032 (0.8)  
0.043 (1.1)  
MECHANICAL DATA :  
* Case : Reliable low cost construction  
utilizing molded plastic technique  
* Epoxy : UL94V-O rate flame retardant  
* Terminals : Plated lead solderable per  
MIL-STD-202, Method 208 guaranteed  
* Polarity : Polarity symbols marked on case  
* Mounting position : Any  
Dimensions in inches and (millimeters)  
* Weight : 4.28 grams  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25 °C ambient temperature unless otherwise specifie.  
Single phase, half wave, 60 Hz, resistive or inductive load  
For capacitive load, derate current by 20%  
D3S  
B10  
D3S  
B20  
D3S  
B40  
D3S  
B60  
D3S  
B80  
RATING  
Maximum Reverse Voltage  
SYMBOL  
UNIT  
VRM  
IF(AV)  
IFSM  
VF  
100  
200  
400  
4.0  
600  
800  
V
A
Maximum Average Forward Current Tc = 25°C  
Maximum Peak Forward Surge Current  
120  
1.05  
10  
A
Maximum Forward Voltage per Diode at IF = 2.0 A  
Maximum Reverse Current at Reverse Voltage  
Maximum Reverse Current at Reverse Voltage Ta = 100 °C  
Operating Junction Temperature Range  
V
IR  
μA  
μA  
°C  
°C  
IR(H)  
TJ  
100  
- 40 to + 150  
- 40 to + 150  
Storage Temperature Range  
TSTG  
Page 1 of 2  
Rev. 02 : March 25, 2005  

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