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CZTA77BKPBFREE PDF预览

CZTA77BKPBFREE

更新时间: 2024-11-14 13:02:51
品牌 Logo 应用领域
CENTRAL 晶体晶体管达林顿晶体管
页数 文件大小 规格书
2页 74K
描述
Transistor,

CZTA77BKPBFREE 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:5.61最大集电极电流 (IC):1 A
配置:DARLINGTON最小直流电流增益 (hFE):10000
最高工作温度:150 °C极性/信道类型:PNP
最大功率耗散 (Abs):2 W子类别:Other Transistors
表面贴装:YES标称过渡频率 (fT):125 MHz
Base Number Matches:1

CZTA77BKPBFREE 数据手册

 浏览型号CZTA77BKPBFREE的Datasheet PDF文件第2页 
TM  
CZTA77  
Central  
Semiconductor Corp.  
SURFACE MOUNT  
PNP SILICON  
DARLINGTON TRANSISTOR  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CZTA77  
type is a Silicon PNP Darlington Transistor man-  
ufactured by the epitaxial planar process, epoxy  
molded in a surface mount package, designed  
for applications requiring extremely high gain.  
MARKING CODE: FULL PART NUMBER  
SOT-223 CASE  
MAXIMUM RATINGS: (T =25°C)  
A
SYMBOL  
CES  
UNITS  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
V
V
60  
10  
1.0  
2.0  
V
V
A
W
EBO  
C
D
I
P
Power Dissipation  
Operating and Storage  
Junction Temperature  
T ,T  
stg  
-65 to +150  
62.5  
°C  
°C/W  
J
Thermal Resistance  
Θ
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
UNITS  
I
I
I
V
V
V
=50V  
=50V  
=10V  
500  
100  
100  
nA  
CES  
CBO  
EBO  
CE  
CB  
EB  
nA  
nA  
V
V
V
BV  
BV  
I =100µA  
60  
60  
CES  
CBO  
C
I =100µA  
C
V
V
I =100mA, I =0.1mA  
1.5  
2.0  
CE(SAT)  
BE(ON)  
FE  
C
B
C
V
=5.0V, I =100mA  
V
CE  
CE  
CE  
CE  
h
h
V
V
V
=5.0V, I =10mA  
10,000  
10,000  
125  
C
=5.0V, I =100mA  
FE  
C
f
=5.0V, I =10mA, f=100MHz  
MHz  
T
C
R4 (17-June 2004)  

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