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CZTA96LEADFREE PDF预览

CZTA96LEADFREE

更新时间: 2024-11-14 19:14:03
品牌 Logo 应用领域
CENTRAL 光电二极管晶体管
页数 文件大小 规格书
2页 528K
描述
Power Bipolar Transistor, 0.5A I(C), 450V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, PLASTIC PACKAGE-4

CZTA96LEADFREE 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:PLASTIC PACKAGE-4
针数:4Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.17外壳连接:COLLECTOR
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:450 V
配置:SINGLE最小直流电流增益 (hFE):25
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:4最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子面层:MATTE TIN (315)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10晶体管元件材料:SILICON
标称过渡频率 (fT):20 MHzBase Number Matches:1

CZTA96LEADFREE 数据手册

 浏览型号CZTA96LEADFREE的Datasheet PDF文件第2页 
CZTA96  
www.centralsemi.com  
SURFACE MOUNT  
EXTREMELY HIGH VOLTAGE  
PNP SILICON TRANSISTOR  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CZTA96 type is  
a surface mount epoxy molded PNP silicon planar  
epitaxial transistors designed for extremely high voltage  
applications.  
MARKING: FULL PART NUMBER  
SOT-223 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
V
A
Collector-Base Voltage  
V
V
V
450  
450  
CBO  
CEO  
EBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
6.0  
V
Continuous Collector Current  
Power Dissipation  
I
500  
mA  
W
C
P
D
2.0  
Operating and Storage Junction Temperature  
Thermal Resistance  
T
T
-65 to +150  
62.5  
°C  
J, stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
I
I
V
V
=400V  
=4.0V  
100  
100  
nA  
nA  
V
CBO  
EBO  
CB  
BE  
BV  
BV  
BV  
I =100µA  
450  
450  
6.0  
500  
490  
9.7  
CBO  
CEO  
C
I =1.0mA  
V
C
I =10µA  
V
EBO  
E
V
V
V
V
I =1.0mA, I =0.1mA  
0.20  
0.30  
0.50  
1.0  
V
CE(SAT)  
CE(SAT)  
CE(SAT)  
BE(SAT)  
FE  
C
B
I =10mA, I =1.0mA  
V
C
B
I =50mA, I =5.0mA  
0.15  
V
C
B
I =10mA, I =1.0mA  
V
C
B
C
h
h
h
h
V
=10V, I =1.0mA  
40  
50  
45  
25  
20  
CE  
CE  
CE  
CE  
CE  
CB  
EB  
V
V
V
V
V
V
=10V, I =10mA  
120  
35  
200  
FE  
C
=10V, I =50mA  
FE  
C
=10V, I =100mA  
FE  
C
f
=10V, I =10mA, f=10MHz  
MHz  
pF  
T
C
C
=20V, I =0, f=1.0MHz  
7.0  
ob  
ib  
E
C
=0.5V, I =0, f=1.0MHz  
130  
pF  
C
R4 (1-March 2010)  

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