CZTA77TR PDF预览

CZTA77TR

更新时间: 2025-07-16 09:41:27
品牌 Logo 应用领域
CENTRAL 光电二极管晶体管
页数 文件大小 规格书
2页 526K
描述
Power Bipolar Transistor, 1A I(C), 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, PLASTIC PACKAGE-4

CZTA77TR 技术参数

生命周期:Active包装说明:PLASTIC PACKAGE-4
针数:4Reach Compliance Code:compliant
HTS代码:8541.29.00.75风险等级:5.84
外壳连接:COLLECTOR最大集电极电流 (IC):1 A
配置:DARLINGTON最小直流电流增益 (hFE):10000
JESD-30 代码:R-PDSO-G4JESD-609代码:e0
元件数量:1端子数量:4
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:PNP最大功率耗散 (Abs):2 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:TIN LEAD
端子形式:GULL WING端子位置:DUAL
晶体管元件材料:SILICON标称过渡频率 (fT):125 MHz

CZTA77TR 数据手册

 浏览型号CZTA77TR的Datasheet PDF文件第2页 
CZTA77  
www.centralsemi.com  
SURFACE MOUNT  
PNP SILICON  
DARLINGTON TRANSISTOR  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CZTA77 type is  
a Silicon PNP Darlington Transistor manufactured by  
the epitaxial planar process, epoxy molded in a surface  
mount package, designed for applications requiring  
extremely high gain.  
MARKING: FULL PART NUMBER  
SOT-223 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
V
A
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
60  
10  
CES  
V
EBO  
Continuous Collector Current  
Power Dissipation  
I
1.0  
A
C
P
2.0  
W
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T
T
-65 to +150  
62.5  
°C  
J, stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
500  
100  
100  
UNITS  
nA  
nA  
nA  
V
I
I
I
V
V
V
=50V  
=50V  
=10V  
CES  
CBO  
EBO  
CE  
CB  
EB  
BV  
I =100µA  
60  
60  
CES  
CBO  
C
BV  
I =100µA  
V
C
V
V
I =100mA, I =0.1mA  
1.5  
2.0  
V
CE(SAT)  
BE(ON)  
FE  
C
B
V
=5.0V, I =100mA  
V
CE  
CE  
CE  
CE  
C
h
h
V
V
V
=5.0V, I =10mA  
10,000  
10,000  
125  
C
=5.0V, I =100mA  
FE  
C
f
=5.0V, I =10mA, f=100MHz  
MHz  
T
C
R5 (1-March 2010)  

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