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CZTA64BK PDF预览

CZTA64BK

更新时间: 2024-11-14 13:07:15
品牌 Logo 应用领域
CENTRAL 晶体晶体管达林顿晶体管
页数 文件大小 规格书
2页 527K
描述
Power Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin,

CZTA64BK 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:ActiveReach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.1Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):1 A
集电极-发射极最大电压:30 V配置:DARLINGTON
最小直流电流增益 (hFE):20000JESD-30 代码:R-PDSO-G4
JESD-609代码:e0元件数量:1
端子数量:4最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):2 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):125 MHzVCEsat-Max:1.5 V
Base Number Matches:1

CZTA64BK 数据手册

 浏览型号CZTA64BK的Datasheet PDF文件第2页 
CZTA14 NPN  
CZTA64 PNP  
www.centralsemi.com  
SURFACE MOUNT  
COMPLEMENTARY  
SILICON DARLINGTON TRANSISTORS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CZTA14, CZTA64  
types are complementary silicon Darlington transistors  
manufactured by the epitaxial planar process, epoxy  
molded in a surface mount package, designed for  
applications requiring extremely high gain.  
MARKING: FULL PART NUMBER  
SOT-223 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
V
A
Collector-Base Voltage  
V
V
V
30  
30  
CBO  
CEO  
EBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
10  
V
Continuous Collector Current  
Power Dissipation  
I
500  
mA  
W
C
P
2.0  
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T
T
-65 to +150  
62.5  
°C  
J, stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
100  
UNITS  
I
I
V
V
=30V  
=10V  
nA  
nA  
V
CBO  
EBO  
CB  
100  
EB  
BV  
I =100µA  
30  
CES  
CE(SAT)  
BE(ON)  
FE  
C
V
V
I =100mA, I =0.1mA  
1.5  
2.0  
V
C
B
V
=5.0V, I =100mA  
V
CE  
CE  
CE  
CE  
C
h
h
V
V
V
=5.0V, I =10mA  
10,000  
20,000  
125  
C
=5.0V, I =100mA  
FE  
C
f
=5.0V, I =10mA, f=100MHz  
MHz  
T
C
R4 (2-March 2011)  

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