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CZTA46TRLEADFREE PDF预览

CZTA46TRLEADFREE

更新时间: 2024-11-14 13:00:15
品牌 Logo 应用领域
CENTRAL 晶体晶体管高压
页数 文件大小 规格书
2页 110K
描述
Transistor

CZTA46TRLEADFREE 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:5.61最大集电极电流 (IC):0.5 A
配置:Single最小直流电流增益 (hFE):50
最高工作温度:150 °C极性/信道类型:NPN
最大功率耗散 (Abs):2 W子类别:Other Transistors
表面贴装:YES标称过渡频率 (fT):20 MHz
Base Number Matches:1

CZTA46TRLEADFREE 数据手册

 浏览型号CZTA46TRLEADFREE的Datasheet PDF文件第2页 
TM  
CZTA46  
Central  
Semiconductor Corp.  
SURFACE MOUNT  
NPN SILICON  
EXTREMELY HIGH VOLTAGE  
TRANSISTOR  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CZTA46 type  
is a surface mount epoxy molded NPN silicon  
planar epitaxial transistors designed for  
extremely high voltage applications.  
SOT-223 CASE  
MAXIMUM RATINGS: (T =25°C)  
A
SYMBOL  
UNITS  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
V
450  
450  
6.0  
500  
2.0  
V
V
CBO  
CEO  
EBO  
V
V
V
mA  
W
I
P
C
Power Dissipation  
D
Operating and Storage  
Junction Temperature  
T ,T  
stg  
-65 to +150  
62.5  
°C  
°C/W  
J
Thermal Resistance  
Θ
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
CBO  
EBO  
TEST CONDITIONS  
CB  
MIN  
TYP  
MAX  
UNITS  
I
I
V
V
=400V  
=4.0V  
100  
nA  
100  
nA  
V
V
V
V
V
V
V
BE  
B
B
B
V
V
V
V
h
h
h
h
I =100µA  
450  
450  
6.0  
610  
490  
8.7  
VCBO  
VCEO  
VEBO  
CE(SAT)  
CE(SAT)  
CE(SAT)  
BE(SAT)  
FE  
C
I =1.0mA  
C
I =10µA  
E
I =1.0mA, I =0.1mA  
0.20  
0.30  
0.50  
1.0  
C
C
B
B
B
B
I =10mA, I =1.0mA  
I =50mA, I =5.0mA  
0.15  
C
I =10mA, I =1.0mA  
C
V
=10V, I =1.0mA  
40  
50  
45  
25  
20  
108  
110  
95  
CE  
CE  
CE  
CE  
CE  
CB  
EB  
C
V
V
V
V
V
V
=10V, I =10mA  
200  
FE  
FE  
FE  
C
C
=10V, I =50mA  
=10V, I =100mA  
35  
C
f
=10V, I =10mA, f=10MHz  
MHz  
pF  
pF  
T
C
C
C
=20V, I =0, f=1.0MHz  
7.0  
130  
ob  
ib  
E
=0.5V, I =0, f=1.0MHz  
C
R1 ( 14-June 2001)  

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