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CYD02S18V PDF预览

CYD02S18V

更新时间: 2024-11-05 03:27:47
品牌 Logo 应用领域
赛普拉斯 - CYPRESS /
页数 文件大小 规格书
26页 587K
描述
FLEx18⑩ 3.3V 64K/128K/256K/512K x 18 Synchronous Dual-Port RAM

CYD02S18V 数据手册

 浏览型号CYD02S18V的Datasheet PDF文件第2页浏览型号CYD02S18V的Datasheet PDF文件第3页浏览型号CYD02S18V的Datasheet PDF文件第4页浏览型号CYD02S18V的Datasheet PDF文件第5页浏览型号CYD02S18V的Datasheet PDF文件第6页浏览型号CYD02S18V的Datasheet PDF文件第7页 
CYD01S18V/CYD02S18V  
CYD04S18V/CYD09S18V  
FLEx18™ 3.3V 64K/128K/256K/512K x 18  
Synchronous Dual-Port RAM  
Functional Description  
Features  
• True dual-ported memory cells that allow simultaneous  
access of the same memory location  
The FLEx18family includes 1-Mbit, 2-Mbit, 4-Mbit and  
9-Mbit pipelined, synchronous, true dual-port static RAMs that  
are high-speed, low-power 3.3V CMOS. Two ports are  
provided, permitting independent, simultaneous access to any  
location in memory. The result of writing to the same location  
by more than one port at the same time is undefined. Registers  
on control, address, and data lines allow for minimal set-up  
and hold time.  
• Synchronous pipelined operation  
• Organization of 1 Mbit, 2 Mbits, 4 Mbits and 9 Mbits  
devices  
• Pipelined output mode allows fast operation  
• 0.18-micron CMOS for optimum speed and power  
• High-speed clock to data access  
During a Read operation, data is registered for decreased  
cycle time. Each port contains a burst counter on the input  
address register. After externally loading the counter with the  
initial address, the counter will increment the address inter-  
nally (more details to follow). The internal Write pulse width is  
independent of the duration of the R/W input signal. The  
internal Write pulse is self-timed to allow the shortest possible  
cycle times.  
• 3.3V low power  
— Active as low as 225 mA (typ)  
— Standby as low as 55 mA (typ)  
• Mailbox function for message passing  
• Global master reset  
A HIGH on CE0 or LOW on CE1 for one clock cycle will power  
down the internal circuitry to reduce the static power  
consumption. One cycle with chip enables asserted is required  
to reactivate the outputs.  
• Separate byte enables on both ports  
• Commercial and industrial temperature ranges  
• IEEE 1149.1-compatible JTAG boundary scan  
• 256-ball FBGA (1 mm pitch)  
Additional features include: readback of burst-counter internal  
address value on address lines, counter-mask registers to  
control the counter wrap-around, counter interrupt (CNTINT)  
flags, readback of mask register value on address lines,  
retransmit functionality, interrupt flags for message passing,  
JTAG for boundary scan, and asynchronous Master Reset  
(MRST).  
• Counter wrap-around control  
— Internal mask register controls counter wrap-around  
— Counter-interrupt flags to indicate wrap-around  
— Memory block retransmit operation  
• Counter readback on address lines  
• Mask register readback on address lines  
The CYD09S18V device in this family has limited features.  
Please see Address Counter and Mask Register Operations  
on page 5 for details.  
• Dual Chip Enables on both ports for easy depth  
expansion  
Seamless Migration to Next Generation Dual Port Family  
• Seamless migration to next-generation dual-port family  
Cypress offers a migration path for all devices in this family to  
the next-generation devices in the Dual-Port family with a  
compatible footprint. Please contact Cypress Sales for more  
details.  
Table 1. Product Selection Guide  
1 Mbit  
2 Mbit  
4 Mbit  
9 Mbit  
Density  
(64K x 18)  
CYD01S18V  
167  
(128K x 18)  
(256K x 18)  
(512K x 18)  
Part Number  
CYD02S18V  
167  
CYD04S18V  
167  
CYD09S18V  
133  
Max. Speed (MHz)  
Max. Access Time – Clock to Data (ns)  
Typical operating current (mA)  
Package  
4.0  
4.0  
4.0  
4.7  
225  
225  
225  
270  
256FBGA  
256FBGA  
256FBGA  
256FBGA  
(17 mm x 17 mm) (17 mm x 17 mm) (17 mm x 17 mm) (17 mm x 17 mm)  
Cypress Semiconductor Corporation  
Document #: 38-06077 Rev. *C  
3901 North First Street  
San Jose, CA 95134  
408-943-2600  
Revised May 5, 2005  

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