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CYD02S18V-167BBC PDF预览

CYD02S18V-167BBC

更新时间： 2024-11-05 03:27:47
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 内存集成电路静态存储器
页数 文件大小 规格书
26页 587K
描述
FLEx18⑩ 3.3V 64K/128K/256K/512K x 18 Synchronous Dual-Port RAM

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CYD02S18V-167BBC 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：BGA包装说明：17 X 17 MM, 1 MM PITCH, FBGA-256
针数：256Reach Compliance Code：not_compliant
ECCN代码：3A991.B.2.AHTS代码：8542.32.00.41
Factory Lead Time：1 week风险等级：5.8
最长访问时间：4 ns其他特性：FLOW-THROUGH OR PIPELINED ARCHITECTURE
最大时钟频率 (fCLK)：167 MHzI/O 类型：COMMON
JESD-30 代码：S-PBGA-B256JESD-609代码：e0
长度：17 mm内存密度：2359296 bit
内存集成电路类型：DUAL-PORT SRAM内存宽度：18
湿度敏感等级：3功能数量：1
端口数量：2端子数量：256
字数：131072 words字数代码：128000
工作模式：SYNCHRONOUS最高工作温度：70 °C
最低工作温度：组织：128KX18
输出特性：3-STATE封装主体材料：PLASTIC/EPOXY
封装代码：LBGA封装等效代码：BGA256,16X16,40
封装形状：SQUARE封装形式：GRID ARRAY, LOW PROFILE
并行/串行：PARALLEL峰值回流温度（摄氏度）：225
电源：3.3 V认证状态：Not Qualified
座面最大高度：1.7 mm最大待机电流：0.075 A
最小待机电流：3.14 V子类别：SRAMs
最大压摆率：0.3 mA最大供电电压 (Vsup)：1.9 V
最小供电电压 (Vsup)：1.7 V标称供电电压 (Vsup)：1.8 V
表面贴装：YES技术：CMOS
温度等级：COMMERCIAL端子面层：TIN LEAD
端子形式：BALL端子节距：1 mm
端子位置：BOTTOM处于峰值回流温度下的最长时间：30
宽度：17 mm

CYD02S18V-167BBC 数据手册

 浏览型号CYD02S18V-167BBC的Datasheet PDF文件第2页浏览型号CYD02S18V-167BBC的Datasheet PDF文件第3页浏览型号CYD02S18V-167BBC的Datasheet PDF文件第4页浏览型号CYD02S18V-167BBC的Datasheet PDF文件第5页浏览型号CYD02S18V-167BBC的Datasheet PDF文件第6页浏览型号CYD02S18V-167BBC的Datasheet PDF文件第7页 
CYD01S18V/CYD02S18V  
CYD04S18V/CYD09S18V  
FLEx18™ 3.3V 64K/128K/256K/512K x 18  
Synchronous Dual-Port RAM  
Functional Description  
Features  
• True dual-ported memory cells that allow simultaneous  
access of the same memory location  
The FLEx18™ family includes 1-Mbit, 2-Mbit, 4-Mbit and  
9-Mbit pipelined, synchronous, true dual-port static RAMs that  
are high-speed, low-power 3.3V CMOS. Two ports are  
provided, permitting independent, simultaneous access to any  
location in memory. The result of writing to the same location  
by more than one port at the same time is undefined. Registers  
on control, address, and data lines allow for minimal set-up  
and hold time.  
• Synchronous pipelined operation  
• Organization of 1 Mbit, 2 Mbits, 4 Mbits and 9 Mbits  
devices  
• Pipelined output mode allows fast operation  
• 0.18-micron CMOS for optimum speed and power  
• High-speed clock to data access  
During a Read operation, data is registered for decreased  
cycle time. Each port contains a burst counter on the input  
address register. After externally loading the counter with the  
initial address, the counter will increment the address inter-  
nally (more details to follow). The internal Write pulse width is  
independent of the duration of the R/W input signal. The  
internal Write pulse is self-timed to allow the shortest possible  
cycle times.  
• 3.3V low power  
— Active as low as 225 mA (typ)  
— Standby as low as 55 mA (typ)  
• Mailbox function for message passing  
• Global master reset  
A HIGH on CE0 or LOW on CE1 for one clock cycle will power  
down the internal circuitry to reduce the static power  
consumption. One cycle with chip enables asserted is required  
to reactivate the outputs.  
• Separate byte enables on both ports  
• Commercial and industrial temperature ranges  
• IEEE 1149.1-compatible JTAG boundary scan  
• 256-ball FBGA (1 mm pitch)  
Additional features include: readback of burst-counter internal  
address value on address lines, counter-mask registers to  
control the counter wrap-around, counter interrupt (CNTINT)  
flags, readback of mask register value on address lines,  
retransmit functionality, interrupt flags for message passing,  
JTAG for boundary scan, and asynchronous Master Reset  
(MRST).  
• Counter wrap-around control  
— Internal mask register controls counter wrap-around  
— Counter-interrupt flags to indicate wrap-around  
— Memory block retransmit operation  
• Counter readback on address lines  
• Mask register readback on address lines  
The CYD09S18V device in this family has limited features.  
Please see Address Counter and Mask Register Operations  
on page 5 for details.  
• Dual Chip Enables on both ports for easy depth  
expansion  
Seamless Migration to Next Generation Dual Port Family  
• Seamless migration to next-generation dual-port family  
Cypress offers a migration path for all devices in this family to  
the next-generation devices in the Dual-Port family with a  
compatible footprint. Please contact Cypress Sales for more  
details.  
Table 1. Product Selection Guide  
1 Mbit  
2 Mbit  
4 Mbit  
9 Mbit  
Density  
(64K x 18)  
CYD01S18V  
167  
(128K x 18)  
(256K x 18)  
(512K x 18)  
Part Number  
CYD02S18V  
167  
CYD04S18V  
167  
CYD09S18V  
133  
Max. Speed (MHz)  
Max. Access Time – Clock to Data (ns)  
Typical operating current (mA)  
Package  
4.0  
4.0  
4.0  
4.7  
225  
225  
225  
270  
256FBGA  
256FBGA  
256FBGA  
256FBGA  
(17 mm x 17 mm) (17 mm x 17 mm) (17 mm x 17 mm) (17 mm x 17 mm)  
Cypress Semiconductor Corporation  
Document #: 38-06077 Rev. *C  
•
3901 North First Street  
•
San Jose, CA 95134  
•
408-943-2600  
Revised May 5, 2005  
1234567...26

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