Datasheet > 暂无类别数据> CY7C2566KV18-500BZXC

CY7C2566KV18-500BZXC

更新时间： 2024-09-15 06:51:47

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		静态存储器双倍数据速率
页数	文件大小	规格书
28页	817K
描述
72-Mbit DDR-II+ SRAM 2-Word Burst Architecture

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

CY7C2566KV18-500BZXC 数据手册

浏览型号CY7C2566KV18-500BZXC的Datasheet PDF文件第2页

浏览型号CY7C2566KV18-500BZXC的Datasheet PDF文件第3页

浏览型号CY7C2566KV18-500BZXC的Datasheet PDF文件第4页

浏览型号CY7C2566KV18-500BZXC的Datasheet PDF文件第5页

浏览型号CY7C2566KV18-500BZXC的Datasheet PDF文件第6页

浏览型号CY7C2566KV18-500BZXC的Datasheet PDF文件第7页

CY7C2566KV18, CY7C2577KV18

CY7C2568KV18, CY7C2570KV18

PRELIMINARY

72-Mbit DDR-II+ SRAM 2-Word Burst

Architecture (2.5 Cycle Read Latency) with ODT

Features

Configurations

■ 72-Mbit density (8M x 8, 8M x 9, 4M x 18, 2M x 36)

■ 550 MHz clock for high bandwidth

With Read Cycle Latency of 2.5 cycles:

CY7C2566KV18 – 8M x 8

CY7C2577KV18 – 8M x 9

■ 2-word burst for reducing address bus frequency

CY7C2568KV18 – 4M x 18

CY7C2570KV18 – 2M x 36

■ Double Data Rate (DDR) interfaces

(data transferred at 1100 MHz) at 550 MHz

■ Available in 2.5 clock cycle latency

Functional Description

■ Two input clocks (K and K) for precise DDR timing

❐ SRAM uses rising edges only

The CY7C2566KV18, CY7C2577KV18, CY7C2568KV18, and

CY7C2570KV18 are 1.8V Synchronous Pipelined SRAMs

equipped with DDR-II+ architecture. The DDR-II+ consists of an

SRAM core with advanced synchronous peripheral circuitry.

Addresses for read and write are latched on alternate rising

edges of the input (K) clock. Write data is registered on the rising

edges of both K and K. Read data is driven on the rising edges

of K and K. Each address location is associated with two 8-bit

words (CY7C2566KV18), 9-bit words (CY7C2577KV18), 18-bit

words (CY7C2568KV18), or 36-bit words (CY7C2570KV18) that

burst sequentially into or out of the device.

■ Echo clocks (CQ and CQ) simplify data capture in high speed

systems

■ Data valid pin (QVLD) to indicate valid data on the output

■ On-Die Termination (ODT) feature

❐ Supported for D_[x:0], BWS_[x:0], and K/K inputs

■ Synchronous internally self-timed writes

■ DDR-II+ operates with 2.5 cycle read latency when DOFF is

asserted HIGH

These devices have an On-Die Termination feature supported

for D_[x:0], BWS_[x:0], and K/K inputs, which helps eliminate

external termination resistors, reduce cost, reduce board area,

and simplify board routing.

■ Operates similar to DDR-I device with 1 cycle read latency

when DOFF is asserted LOW

[1]

Asynchronous inputs include an output impedance matching

input (ZQ). Synchronous data outputs (Q, sharing the same

physical pins as the data inputs D) are tightly matched to the two

output echo clocks CQ/CQ, eliminating the need for separately

capturing data from each individual DDR SRAM in the system

design.

■ Core V_DD= 1.8V ± 0.1V; IO V_DDQ= 1.4V to V_DD

❐ Supports both 1.5V and 1.8V IO supply

■ HSTL inputs and variable drive HSTL output buffers

■ Available in 165-Ball FBGA package (13 x 15 x 1.4 mm)

■ Offered in both Pb-free and non Pb-free packages

■ JTAG 1149.1 compatible test access port

All synchronous inputs pass through input registers controlled by

the K or K input clocks. All data outputs pass through output

registers controlled by the K or K input clocks. Writes are

conducted with on-chip synchronous self-timed write circuitry.

■ Phase Locked Loop (PLL) for accurate data placement

Table 1. Selection Guide

Description

Maximum Operating Frequency

Maximum Operating Current

550 MHz

500 MHz

500

450 MHz

450

400 MHz

400

Unit

MHz

550

740

760

970

690

630

580

690

630

580

x18

x36

700

650

590

890

820

750

Note

1. The Cypress QDR-II+ devices surpass the QDR consortium specification and can support V

= 1.4V to V

DDQ

Cypress Semiconductor Corporation

Document Number: 001-15889 Rev. *D

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised April 24, 2009

[+] Feedback

12 3 4 5 6 7...28

中文翻译

下载PDF

与CY7C2566KV18-500BZXC相关器件

型号	品牌	获取价格	描述	数据表
CY7C2566KV18-500BZXI	CYPRESS	获取价格	72-Mbit DDR-II+ SRAM 2-Word Burst Architecture
CY7C2566KV18-550BZC	CYPRESS	获取价格	72-Mbit DDR-II+ SRAM 2-Word Burst Architecture
CY7C2566KV18-550BZI	CYPRESS	获取价格	72-Mbit DDR-II+ SRAM 2-Word Burst Architecture
CY7C2566KV18-550BZXC	CYPRESS	获取价格	72-Mbit DDR-II+ SRAM 2-Word Burst Architecture
CY7C2566KV18-550BZXI	CYPRESS	获取价格	72-Mbit DDR-II+ SRAM 2-Word Burst Architecture
CY7C25682KV18	CYPRESS	获取价格	72-Mbit DDR II SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT
CY7C25682KV18-400BZC	CYPRESS	获取价格	72-Mbit DDR II SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT
CY7C25682KV18-400BZXC	CYPRESS	获取价格	72-Mbit DDR II SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT
CY7C25682KV18-400BZXC	INFINEON	获取价格	DDR-II+ CIO
CY7C25682KV18-450BZC	CYPRESS	获取价格	72-Mbit DDR II SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT

与CY7C2566KV18-500BZXC相关文章

摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

5
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

5
SL74HC10N：高性能三输入与非门解析
2024-09-03

83
AIC1781A 电池充电控制器深度解析
2024-09-03

76

产品中心

服务支持

精选活动

关于我们

帮助中心

CY7C2566KV18-500BZXC

CY7C2566KV18-500BZXC 数据手册

与CY7C2566KV18-500BZXC相关器件

与CY7C2566KV18-500BZXC相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

CY7C2566KV18-500BZXC

CY7C2566KV18-500BZXC 数据手册

与CY7C2566KV18-500BZXC相关器件

与CY7C2566KV18-500BZXC相关文章

您还可以找

您在本页遇到什么问题？