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CY7C1473V25-133BZXC PDF预览

CY7C1473V25-133BZXC

更新时间: 2024-09-16 22:36:31
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器
页数 文件大小 规格书
30页 373K
描述
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture

CY7C1473V25-133BZXC 数据手册

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CY7C1471V25  
CY7C1473V25  
CY7C1475V25  
PRELIMINARY  
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM  
with NoBL™ Architecture  
Features  
Functional Description[1]  
• No Bus Latency™ (NoBL™) architecture eliminates  
dead cycles between write and read cycles.  
The CY7C1471V25, CY7C1473V25 and CY7C1475V25 are  
2.5V, 2M x 36/4M x 18/1M x 72 Synchronous Flow-through  
Burst SRAMs designed specifically to support unlimited true  
back-to-back Read/Write operations without the insertion of  
wait states. The CY7C1471V25, CY7C1473V25 and  
CY7C1475V25 are equipped with the advanced No Bus  
Latency (NoBL) logic required to enable consecutive  
Read/Write operations with data being transferred on every  
clock cycle. This feature dramatically improves the throughput  
of data through the SRAM, especially in systems that require  
frequent Write-Read transitions.  
• Can support up to 133-MHz bus operations with zero  
wait states  
• Data is transferred on every clock  
• Pin compatible and functionally equivalent to ZBT™  
devices  
• Internally self-timed output buffer control to eliminate  
the need to use OE  
• Registered inputs for flow-through operation  
• Byte Write capability  
All synchronous inputs pass through input registers controlled  
by the rising edge of the clock. The clock input is qualified by  
the Clock Enable (CEN) signal, which when deasserted  
suspends operation and extends the previous clock cycle.  
Maximum access delay from the clock rise is 6.5 ns (133-MHz  
device).  
• 2.5V/1.8V I/O power supply  
• Fast clock-to-output times  
— 6.5 ns (for 133-MHz device)  
— 8.5 ns (for 100-MHz device)  
Write operations are controlled by the two or four Byte Write  
Select (BWX) and a Write Enable (WE) input. All writes are  
conducted with on-chip synchronous self-timed write circuitry.  
• Clock Enable (CEN) pin to enable clock and suspend  
operation  
Three synchronous Chip Enables (CE1, CE2, CE3) and an  
asynchronous Output Enable (OE) provide for easy bank  
selection and output tri-state control. In order to avoid bus  
contention, the output drivers are synchronously tri-stated  
during the data portion of a write sequence.  
• Synchronous self-timed writes  
• Asynchronous Output Enable  
• Offered in JEDEC-standard lead-free 100 TQFP, and  
165-ball fBGA packages for CY7C1471V25 and  
CY7C1473V25. 209-ball fBGA package for  
CY7C1475V25.  
• Three chip enables for simple depth expansion.  
• Automatic Power-down feature available using ZZ  
mode or CE deselect.  
• JTAG boundary scan for BGA and fBGA packages  
• Burst Capability—linear or interleaved burst order  
• Low standby power  
Selection Guide  
133 MHz  
6.5  
100 MHz  
8.5  
Unit  
ns  
Maximum Access Time  
Maximum Operating Current  
305  
275  
mA  
mA  
Maximum CMOS Standby Current  
120  
120  
Note:  
1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.  
Cypress Semiconductor Corporation  
Document #: 38-05287 Rev. *E  
3901 North First Street  
San Jose, CA 95134  
408-943-2600  
Revised December 5, 2004  

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