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CY7C1382D-250BZC PDF预览

CY7C1382D-250BZC

更新时间: 2024-10-11 21:53:55
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器
页数 文件大小 规格书
29页 468K
描述
18-Mbit (512K x 36/1M x 18) Pipelined SRAM

CY7C1382D-250BZC 数据手册

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CY7C1380D  
CY7C1382D  
PRELIMINARY  
18-Mbit (512K x 36/1M x 18) Pipelined SRAM  
Features  
Functional Description[1]  
• Supports bus operation up to 250 MHz  
• Available speed grades are 250, 200 and 167 MHz  
• Registered inputs and outputs for pipelined operation  
• 3.3V core power supply  
The CY7C1380D/CY7C1382D SRAM integrates 524,288 x 36  
and 1,048,576 x 18 SRAM cells with advanced synchronous  
peripheral circuitry and a two-bit counter for internal burst  
operation. All synchronous inputs are gated by registers  
controlled by a positive-edge-triggered Clock Input (CLK). The  
synchronous inputs include all addresses, all data inputs,  
• 2.5V / 3.3V I/O operation  
• Fast clock-to-output times  
address-pipelining Chip Enable (  
), depth-expansion Chip  
CE1  
[2]  
Enables (CE and  
), Burst Control inputs (  
,
,
CE3  
— 2.6 ns (for 250-MHz device)  
ADSC ADSP  
2
), Write Enables (  
ADV  
, and  
BWX  
), and Global Write  
and  
BWE  
— 3.0 ns (for 200-MHz device)  
(
). Asynchronous inputs include the Output Enable (  
)
OE  
GW  
— 3.4 ns (for 167-MHz device)  
and the ZZ pin.  
• Provide high-performance 3-1-1-1 access rate  
Addresses and chip enables are registered at rising edge of  
clock when either Address Strobe Processor ( ) or  
User-selectable burst counter supporting Intel  
ADSP  
) are active. Subsequent  
Pentium interleaved or linear burst sequences  
Address Strobe Controller (  
ADSC  
burst addresses can be internally generated as controlled by  
the Advance pin ( ).  
• Separate processor and controller address strobes  
• Synchronous self-timed writes  
ADV  
• Asynchronous output enable  
Address, data inputs, and write controls are registered on-chip  
to initiate a self-timed Write cycle.This part supports Byte Write  
operations (see Pin Descriptions and Truth Table for further  
details). Write cycles can be one to two or four bytes wide as  
• Single Cycle Chip Deselect  
• Offered in JEDEC-standard lead-free 100-pin TQFP,  
119-ball BGA and 165-Ball fBGA packages  
controlled by the byte write control inputs.  
when active  
GW  
• IEEE 1149.1 JTAG-Compatible Boundary Scan  
• “ZZ” Sleep Mode Option  
causes all bytes to be written.  
LOW  
The CY7C1380D/CY7C1382D operates from a +3.3V core  
power supply while all outputs may operate with either a +2.5  
or +3.3V supply. All inputs and outputs are JEDEC-standard  
JESD8-5-compatible.  
Selection Guide  
250 MHz  
2.6  
200 MHz  
3.0  
167 MHz  
3.4  
Unit  
ns  
Maximum Access Time  
Maximum Operating Current  
Maximum CMOS Standby Current  
350  
70  
300  
70  
275  
70  
mA  
mA  
Shaded areas contain advance information. Please contact your local Cypress sales representative for availability of these parts.  
Notes:  
1. For best–practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.  
2. CE , CE are for TQFP and 165 fBGA package only. 119 BGA is offered only in 1 Chip Enable.  
3
2
Cypress Semiconductor Corporation  
3901 North First Street  
San Jose, CA 95134  
408-943-2600  
Document #: 38-05543 Rev. *A  
Revised October 28, 2004  

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