Datasheet > 暂无类别数据> CY7C1241V18-300BZXI

CY7C1241V18-300BZXI

更新时间： 2024-09-18 05:09:31

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		静态存储器
页数	文件大小	规格书
28页	1251K
描述
36-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)

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CY7C1241V18-300BZXI 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	BGA	包装说明：	LBGA, BGA165,11X15,40
针数：	165	Reach Compliance Code：	compliant
ECCN代码：	3A991.B.2.A	HTS代码：	8542.32.00.41
风险等级：	5.84	最长访问时间：	0.45 ns
其他特性：	PIPELINED ARCHITECTURE	最大时钟频率 (fCLK)：	300 MHz
I/O 类型：	SEPARATE	JESD-30 代码：	R-PBGA-B165
JESD-609代码：	e1	长度：	17 mm
内存密度：	33554432 bit	内存集成电路类型：	QDR SRAM
内存宽度：	8	湿度敏感等级：	3
功能数量：	1	端子数量：	165
字数：	4194304 words	字数代码：	4000000
工作模式：	SYNCHRONOUS	最高工作温度：	85 °C
最低工作温度：	-40 °C	组织：	4MX8
输出特性：	3-STATE	封装主体材料：	PLASTIC/EPOXY
封装代码：	LBGA	封装等效代码：	BGA165,11X15,40
封装形状：	RECTANGULAR	封装形式：	GRID ARRAY, LOW PROFILE
并行/串行：	PARALLEL	峰值回流温度（摄氏度）：	260
电源：	1.5/1.8,1.8 V	认证状态：	Not Qualified
座面最大高度：	1.4 mm	最大待机电流：	0.28 A
最小待机电流：	1.7 V	子类别：	SRAMs
最大压摆率：	1.04 mA	最大供电电压 (Vsup)：	1.9 V
最小供电电压 (Vsup)：	1.7 V	标称供电电压 (Vsup)：	1.8 V
表面贴装：	YES	技术：	CMOS
温度等级：	INDUSTRIAL	端子面层：	Tin/Silver/Copper (Sn/Ag/Cu)
端子形式：	BALL	端子节距：	1 mm
端子位置：	BOTTOM	处于峰值回流温度下的最长时间：	40
宽度：	15 mm	Base Number Matches：	1

CY7C1241V18-300BZXI 数据手册

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CY7C1241V18

CY7C1256V18

CY7C1243V18

CY7C1245V18

36-Mbit QDR™-II+ SRAM 4-Word

Burst Architecture (2.0 Cycle Read Latency)

Functional Description

Features

• Separate independent read and write data ports

— Supports concurrent transactions

The CY7C1241V18, CY7C1256V18, CY7C1243V18, and

CY7C1245V18 are 1.8V Synchronous Pipelined SRAMs,

equipped with Quad Data Rate-II+ (QDR-II+) architecture.

QDR-II+ architecture consists of two separate ports to access

the memory array. The read port has dedicated data outputs

to support read operations and the write port has dedicated

data inputs to support write operations. QDR-II+ architecture

has separate data inputs and data outputs to completely

eliminate the need to “turn around” the data bus required with

common IO devices. Each port can be accessed through a

common address bus. Read and write addresses are latched

on alternate rising edges of the input (K) clock. Accesses to

the QDR-II+ read and write ports are completely independent

of one another. To maximize data throughput, both read and

write ports are equipped with Double Data Rate (DDR) inter-

faces. Each address location is associated with four 8-bit

words (CY7C1241V18), 9-bit words (CY7C1256V18), 18-bit

words (CY7C1243V18), or 36-bit words (CY7C1245V18), that

burst sequentially into or out of the device. Because data can

be transferred into and out of the device on every rising edge

of both input clocks (K and K), memory bandwidth is

maximized while simplifying system design by eliminating bus

“turn-arounds”.

• 300 MHz to 375 MHz clock for high bandwidth

• 4-Word Burst for reducing address bus frequency

• Double Data Rate (DDR) interfaces on both read and write

ports (data transferred at 750 MHz) at 375 MHz

• Read latency of 2.0 clock cycles

• Two input clocks (K and K) for precise DDR timing

— SRAM uses rising edges only

• Echo clocks (CQ and CQ) simplify data capture in

high-speed systems

• Singlemultiplexedaddressinputbuslatchesaddressinputs

for both read and write ports

• Separate Port Selects for depth expansion

• Data valid pin (QVLD) to indicate valid data on the output

• Synchronous internally self-timed writes

• Available in x8, x9, x18, and x36 configurations

• Full data coherency providing most current data

[1]

• Core V_DD= 1.8V ± 0.1V; IO V_DDQ= 1.4V to V_DD

Depth expansion is accomplished with Port Selects for each

port. Port selects enable each port to operate independently.

• HSTL inputs and Variable drive HSTL output buffers

• Available in 165-ball FBGA package (15 x 17 x 1.4 mm)

• Offered in both Pb-free and non Pb-free packages

• JTAG 1149.1 compatible test access port

All synchronous inputs pass through input registers controlled

by the K or K input clocks. All data outputs pass through output

registers controlled by the K or K input clocks. Writes are

conducted with on-chip synchronous self-timed write circuitry.

• Delay Lock Loop (DLL) for accurate data placement

Configurations

With Read Cycle Latency of 2.0 cycles:

CY7C1241V18 – 4M x 8

CY7C1256V18 – 4M x 9

CY7C1243V18 – 2M x 18

CY7C1245V18 – 1M x 36

Selection Guide

375 MHz

333 MHz

333

300 MHz

300

Unit

MHz

Maximum Operating Frequency

Maximum Operating Current

375

1240

1120

1040

Note

1. The QDR consortium specification for V

is 1.5V + 0.1V. The Cypress QDR devices exceed the QDR consortium specification and are capable of supporting

DDQ

= 1.4V to V

DDQ

Cypress Semiconductor Corporation

Document Number: 001-06365 Rev. *C

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised May 11, 2007

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与CY7C1241V18-300BZXI相关器件

型号	品牌	获取价格	描述	数据表
CY7C1241V18-333BZI	CYPRESS	获取价格	QDR SRAM, 4MX8, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165
CY7C1241V18-333BZXI	CYPRESS	获取价格	QDR SRAM, 4MX8, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA
CY7C1241V18-375BZXC	CYPRESS	获取价格	QDR SRAM, 4MX8, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA
CY7C12431KV18	CYPRESS	获取价格	36-Mbit QDR? II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C1243KV18	CYPRESS	获取价格	36-Mbit QDRÂ® II SRAM 4-Word Burst Architectu
CY7C1243KV18-400BZC	CYPRESS	获取价格	36-Mbit QDRÂ® II SRAM 4-Word Burst Architectu
CY7C1243KV18-450BZC	CYPRESS	获取价格	36-Mbit QDRÂ® II SRAM 4-Word Burst Architectu
CY7C1243KV18-450BZC	INFINEON	获取价格	Synchronous SRAM
CY7C1243V18	CYPRESS	获取价格	36-Mbit QDR⑩-II+ SRAM 4-Word Burst Architectu
CY7C1243V18-300BZC	CYPRESS	获取价格	36-Mbit QDR⑩-II+ SRAM 4-Word Burst Architectu

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