Datasheet > CY7C1061GN30-10ZXIT

CY7C1061GN30-10ZXIT

更新时间： 2024-09-16 14:56:07

品牌	Logo	应用领域
英飞凌 - INFINEON		静态存储器
页数	文件大小	规格书
21页	1927K
描述
Asynchronous SRAM

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中文翻译

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数据手册

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CY7C1061GN30-10ZXIT 数据手册

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CY7C1061GN/CY7C10612GN

16-Mbit (1M words × 16 bit) Static RAM

16-Mbit (1M words

× 16 bit) Static RAM

Features

Functional Description

■ High speed

❐ t_AA= 10 ns/15 ns

The CY7C1061GN/CY7C10612GN is a high performance

CMOS Static RAM organized as 1,048,576 words by 16 bits.

To write to the device, take Chip Enables (CE₁LOW and CE₂

HIGH) and Write Enable (WE) input LOW. If Byte Low Enable

(BLE) is LOW, then data from I/O pins (I/O₀through I/O₇), is

written into the location specified on the address pins (A₀through

■ Low active power

❐ I_CC= 90 mA at 100 MHz

■ Low CMOS standby current

❐ I_SB2= 20 mA (typ)

₁₉). If Byte High Enable (BHE) is LOW, then data from I/O pins

(I/O₈through I/O₁₅) is written into the location specified on the

address pins (A₀through A₁₉).

■ Operating voltages of 2.2 V to 3.6 V

■ 1.0 V data retention

To read from the device, take Chip Enables (CE₁LOW and CE₂

HIGH) and Output Enable (OE) LOW while forcing the Write

Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data

from the memory location specified by the address pins appears

on I/O₀to I/O₇. If Byte High Enable (BHE) is LOW, then data from

memory appears on I/O₈to I/O₁₅. See Truth Table on page 13

for a complete description of Read and Write modes.

■ Automatic power down when deselected

■ TTL compatible inputs and outputs

■ Easy memory expansion with CE₁and CE₂features

■ Available in Pb-free 48-pin TSOP I, 54-pin TSOP II, and 48-ball

VFBGA packages

The input or output pins (I/O₀through I/O₁₅) are placed in a high

impedance state when the device is deselected (CE₁HIGH/CE₂

LOW), the outputs are disabled (OE HIGH), the BHE and BLE

are disabled (BHE, BLE HIGH), or during a write operation (CE₁

LOW, CE₂HIGH, and WE LOW).

■ Offered in dual Chip Enable options

Logic Block Diagram

INPUT BUFFER

I/O₀– I/O₇

I/O₈– I/O₁₅

1M x 16

ARRAY

COLUMN

DECODER

BHE

CE₂

CE₁

BLE

Cypress Semiconductor Corporation

Document Number: 001-93680 Rev. *C

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised September 29, 2016

12 3 4 5 6 7...21

中文翻译

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