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CY7C1049CV33-10ZCT

更新时间： 2024-09-18 08:42:27
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器光电二极管
页数 文件大小 规格书
11页 211K
描述
Standard SRAM, 512KX8, 10ns, CMOS, PDSO44, TSOP2-44

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CY7C1049CV33-10ZCT 数据手册

 浏览型号CY7C1049CV33-10ZCT的Datasheet PDF文件第2页浏览型号CY7C1049CV33-10ZCT的Datasheet PDF文件第3页浏览型号CY7C1049CV33-10ZCT的Datasheet PDF文件第4页浏览型号CY7C1049CV33-10ZCT的Datasheet PDF文件第5页浏览型号CY7C1049CV33-10ZCT的Datasheet PDF文件第6页浏览型号CY7C1049CV33-10ZCT的Datasheet PDF文件第7页 
CY7C1049CV33  
4-Mbit (512K x 8) Static RAM  
Features  
Functional Description[1]  
• Temperature Ranges  
The CY7C1049CV33 is a high-performance CMOS Static  
RAM organized as 524,288 words by 8 bits. Easy memory  
expansion is provided by an active LOW Chip Enable (CE), an  
active LOW Output Enable (OE), and three-state drivers.  
Writing to the device is accomplished by taking Chip Enable  
(CE) and Write Enable (WE) inputs LOW. Data on the eight I/O  
pins (I/O0 through I/O7) is then written into the location  
specified on the address pins (A0 through A18).  
— Commercial: 0°C to 70°C  
— Industrial: –40°C to 85°C  
— Automotive: –40°C to 125°C  
• High speed  
— tAA = 10 ns  
• Low active power  
Reading from the device is accomplished by taking Chip  
Enable (CE) and Output Enable (OE) LOW while forcing Write  
Enable (WE) HIGH. Under these conditions, the contents of  
the memory location specified by the address pins will appear  
on the I/O pins.  
— 324 mW (max.)  
• 2.0V data retention  
• Automatic power-down when deselected  
• TTL-compatible inputs and outputs  
• Easy memory expansion with CE and OE features  
The eight input/output pins (I/O0 through I/O7) are placed in a  
high-impedance state when the device is deselected (CE  
HIGH), the outputs are disabled (OE HIGH), or during a Write  
operation (CE LOW, and WE LOW).  
The CY7C1049CV33 is available in standard 400-mil-wide  
36-pin SOJ package and 44-pin TSOP II package with center  
power and ground (revolutionary) pinout.  
Logic Block Diagram  
Pin Configuration  
SOJ  
Top View  
TSOP II  
Top View  
A0  
A1  
36  
35  
34  
33  
1
NC  
A18  
A17  
A16  
A15  
44  
1
NC  
NC  
NC  
NC  
NC  
A18  
A17  
A16  
A15  
OE  
I/O  
2
3
4
43  
42  
41  
40  
39  
38  
2
3
4
5
6
A2  
A
0
A
A3  
A4  
1
2
A
32  
5
I/O  
0
A3  
A4  
CE  
I/O0  
I/O1  
VCC  
INPUT BUFFER  
31  
30  
29  
28  
6
OE  
I/O7  
I/O6  
7
A
37  
36  
35  
34  
33  
7
8
9
10  
11  
12  
13  
0
CE  
I/O  
8
I/O  
I/O  
1
A
1
9
0
7
A
2
10  
11  
12  
13  
I/O  
I/O  
GND  
1
6
SS  
2
A
3
V
V
CC  
27  
26  
25  
A
GND  
I/O2  
I/O3  
WE  
VCC  
I/O5  
I/O4  
A14  
A13  
A12  
4
V
V
SS  
CC  
A
6
5
I/O  
I/O  
I/O  
I/O  
3
4
5
512K x 8  
ARRAY  
32  
I/O  
I/O  
2
5
A
31  
30  
29  
28  
I/O  
4
A14  
A13  
I/O  
14  
15  
16  
17  
18  
19  
20  
21  
22  
3
A
7
24  
23  
22  
21  
20  
WE  
A5  
A6  
A
8
9
A
A5  
A6  
A7  
A8  
A9  
14  
15  
16  
17  
18  
A12  
A
10  
27  
26  
25  
A
11  
A
7
A11  
A10  
NC  
A
A
8
10  
6
7
POWER  
DOWN  
A
NC  
NC  
9
COLUMN  
DECODER  
CE  
NC  
NC  
24  
23  
19  
NC  
I/O  
WE  
OE  
Notes:  
1. For guidelines on SRAM system design, please refer to the System Design Guidelines Cypress application note, available on the internet at www.cypress.com.  
Cypress Semiconductor Corporation  
Document #: 38-05006 Rev. *E  
•
3901 North First Street  
•
San Jose, CA 95134  
•
408-943-2600  
Revised March 29, 2005  
1234567...11

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