Datasheet > CY7C1018DV33-10VXIT

CY7C1018DV33-10VXIT

更新时间： 2024-11-07 14:51:15

品牌	Logo	应用领域
英飞凌 - INFINEON		静态存储器
页数	文件大小	规格书
20页	553K
描述
Asynchronous SRAM

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中文翻译

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数据手册

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CY7C1018DV33-10VXIT 数据手册

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CY7C1018DV33

CY7C1019DV33

1-Mbit (128 K × 8) Static RAM

1-Mbit (128

K × 8) Static RAM

Features

Functional Description

■ Pin- and function-compatible with CY7C1018CV33 and

CY7C1019CV33

The CY7C1018DV33/CY7C1019DV33 is a high-performance

CMOS static RAM organized as 131,072 words by 8 bits. Easy

memory expansion is provided by an active LOW Chip Enable

(CE), an active LOW Output Enable (OE), and three-state

drivers. This device has an automatic power-down feature that

significantly reduces power consumption when deselected.

■ High speed

❐ t_AA= 10 ns

■ Low Active Power

Writing to the device is accomplished by taking Chip Enable (CE)

and Write Enable (WE) inputs LOW. Data on the eight I/O pins

(I/O₀through I/O₇) is then written into the location specified on

the address pins (A₀through A₁₆).

❐ I_CC= 60 mA @ 10 ns

■ Low CMOS Standby Power

❐ I_SB2= 3 mA

■ 2.0 V Data retention

Reading from the device is accomplished by taking Chip Enable

(CE) and Output Enable (OE) LOW while forcing Write Enable

(WE) HIGH. Under these conditions, the contents of the memory

location specified by the address pins will appear on the I/O pins.

■ Automatic power-down when deselected

■ CMOS for optimum speed/power

■ Center power/ground pinout

The eight input/output pins (I/O₀through I/O₇) are placed in a

high-impedance state when the device is deselected (CE HIGH),

the outputs are disabled (OE HIGH), or during a write operation

(CE LOW, and WE LOW).

■ Easy memory expansion with CE and OE options

■ Available in Pb-free 32-pin 400-Mil wide Molded SOJ, 32-pin

The CY7C1018DV33/CY7C1019DV33 are available in Pb-free

32-pin 400-Mil wide Molded SOJ, 32-pin TSOP II and 48-ball

VFBGA packages.

TSOP II and 48-ball VFBGA packages

For a complete list of related documentation, click here.

Logic Block Diagram

I/O

INPUTBUFFER

128K × 8

ARRAY

POWER

DOWN

COLUMN

DECODER

I/O

Cypress Semiconductor Corporation

Document Number: 38-05481 Rev. *J

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised May 26, 2015

12 3 4 5 6 7...20

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与CY7C1018DV33-10VXIT相关器件

型号	品牌	获取价格	描述	数据表
CY7C1018DV33-8VXC	CYPRESS	获取价格	Standard SRAM, 128KX8, 8ns, CMOS, PDSO32, 0.300 INCH, LEAD FREE, SOJ-32
CY7C1018DV33-8VXI	CYPRESS	获取价格	Standard SRAM, 128KX8, 8ns, CMOS, PDSO32, 0.300 INCH, LEAD FREE, SOJ-32
CY7C1018V33	CYPRESS	获取价格	128K x 8 Static RAM
CY7C1018V33-10VC	CYPRESS	获取价格	128K x 8 Static RAM
CY7C1018V33-12VC	CYPRESS	获取价格	128K x 8 Static RAM
CY7C1018V33-12VCT	CYPRESS	获取价格	Standard SRAM, 128KX8, 12ns, CMOS, PDSO32, 0.300 INCH, SOJ-32
CY7C1018V33-15VC	CYPRESS	获取价格	128K x 8 Static RAM
CY7C1018V33-15VCT	CYPRESS	获取价格	Standard SRAM, 128KX8, 15ns, CMOS, PDSO32, 0.300 INCH, SOJ-32
CY7C1018V33L-12VC	CYPRESS	获取价格	128K x 8 Static RAM
CY7C1018V33L-15VC	CYPRESS	获取价格	128K x 8 Static RAM

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