是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | QFP | 包装说明: | PLASTIC, TQFP-100 |
针数: | 100 | Reach Compliance Code: | not_compliant |
ECCN代码: | 3A991.B.2.A | HTS代码: | 8542.32.00.41 |
风险等级: | 5.79 | 最长访问时间: | 20 ns |
其他特性: | AUTOMATIC POWER DOWN | I/O 类型: | COMMON |
JESD-30 代码: | S-PQFP-G100 | JESD-609代码: | e0 |
长度: | 14 mm | 内存密度: | 1179648 bit |
内存集成电路类型: | DUAL-PORT SRAM | 内存宽度: | 9 |
湿度敏感等级: | 3 | 功能数量: | 1 |
端口数量: | 2 | 端子数量: | 100 |
字数: | 131072 words | 字数代码: | 128000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 70 °C |
最低工作温度: | 组织: | 128KX9 | |
输出特性: | 3-STATE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | LFQFP | 封装等效代码: | QFP100,.63SQ,20 |
封装形状: | SQUARE | 封装形式: | FLATPACK, LOW PROFILE, FINE PITCH |
并行/串行: | PARALLEL | 峰值回流温度(摄氏度): | 240 |
电源: | 3.3 V | 认证状态: | Not Qualified |
座面最大高度: | 1.6 mm | 最大待机电流: | 0.00005 A |
最小待机电流: | 3 V | 子类别: | SRAMs |
最大压摆率: | 0.175 mA | 最大供电电压 (Vsup): | 3.6 V |
最小供电电压 (Vsup): | 3 V | 标称供电电压 (Vsup): | 3.3 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | COMMERCIAL | 端子面层: | TIN LEAD |
端子形式: | GULL WING | 端子节距: | 0.5 mm |
端子位置: | QUAD | 处于峰值回流温度下的最长时间: | 30 |
宽度: | 14 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
CY7C019V-20AI | CYPRESS |
获取价格 |
3.3V 64K/128K x 8/9 Dual-Port Static RAM | |
CY7C019V-20AXC | CYPRESS |
获取价格 |
3.3V 64K/128K x 8/9 Dual-Port Static RAM | |
CY7C019V-20AXI | CYPRESS |
获取价格 |
3.3V 64K/128K x 8/9 Dual-Port Static RAM | |
CY7C019V-25AC | CYPRESS |
获取价格 |
3.3V 64K/128K x 8/9 Dual-Port Static RAM | |
CY7C019V-25AXC | CYPRESS |
获取价格 |
3.3V 64K/128K x 8/9 Dual-Port Static RAM | |
CY7C024 | CYPRESS |
获取价格 |
4K x 16/18 and 8K x 16/18 Dual-Port Static RAM with SEM, INT, BUSY | |
CY7C024_0411 | CYPRESS |
获取价格 |
4K x 16/18 and 8K x 16/18 Dual-Port Static RAM with SEM, INT, BUSY | |
CY7C024_09 | CYPRESS |
获取价格 |
4K x 16/18 and 8K x 16/18 Dual-Port Static RAM with SEM, INT, BUSY | |
CY7C0241 | CYPRESS |
获取价格 |
4K x 16/18 and 8K x 16/18 Dual-Port Static RAM with SEM, INT, BUSY | |
CY7C0241-15AC | ROCHESTER |
获取价格 |
4KX18 DUAL-PORT SRAM, 15ns, PQFP100, PLASTIC, TQFP-100 |