5秒后页面跳转
CY14E256L-SZ25XCT PDF预览

CY14E256L-SZ25XCT

更新时间: 2024-01-02 21:59:20
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
16页 796K
描述
256-Kbit (32K x 8) nvSRAM

CY14E256L-SZ25XCT 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended零件包装代码:SOIC
包装说明:SOP,针数:32
Reach Compliance Code:unknown风险等级:5.75
最长访问时间:25 nsJESD-30 代码:R-PDSO-G32
JESD-609代码:e3长度:20.726 mm
内存密度:262144 bit内存集成电路类型:NON-VOLATILE SRAM
内存宽度:8湿度敏感等级:3
功能数量:1端子数量:32
字数:32768 words字数代码:32000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:32KX8
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL峰值回流温度(摄氏度):260
认证状态:COMMERCIAL座面最大高度:2.54 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:MATTE TIN端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:20宽度:7.505 mm
Base Number Matches:1

CY14E256L-SZ25XCT 数据手册

 浏览型号CY14E256L-SZ25XCT的Datasheet PDF文件第2页浏览型号CY14E256L-SZ25XCT的Datasheet PDF文件第3页浏览型号CY14E256L-SZ25XCT的Datasheet PDF文件第4页浏览型号CY14E256L-SZ25XCT的Datasheet PDF文件第5页浏览型号CY14E256L-SZ25XCT的Datasheet PDF文件第6页浏览型号CY14E256L-SZ25XCT的Datasheet PDF文件第7页 
CY14E256L  
PRELIMINARY  
256-Kbit (32K x 8) nvSRAM  
Features  
Functional Description  
• 25 ns and 45 ns Access Times  
The Cypress CY14E256L is a fast static RAM with a nonvol-  
atile element in each memory cell. The embedded nonvolatile  
elements incorporate QuantumTrap technology producing the  
world’s most reliable nonvolatile memory. The SRAM provides  
Infinite read and write cycles, while independent, nonvolatile  
data resides in the highly reliable QuantumTrap cell. Data  
transfers from the SRAM to the nonvolatile elements (the  
STORE operation) takes place automatically at power down.  
On power-up, data is restored to the SRAM (the RECALL  
operation) from the nonvolatile memory. Both the STORE and  
RECALL operations are also available under software control.  
A hardware STORE may be initiated with HSB pin.  
• “Hands-off” Automatic STORE on Power Down with  
external 68µF capacitor  
STORE to QuantumTrap® Nonvolatile Elements is  
initiated by Software, Hardware or Autostore® on  
Power-down  
RECALL to SRAM Initiated by Software or Power-up  
• Infinite READ, WRITE and RECALL Cycles  
• 15 mA Typical ICC at 200 ns Cycle Time  
• 1,000,000 STORE Cycles to QuantumTrap  
• 100-Year Data Retention to QuantumTrap  
• Single 5V Operation +10%  
• Commercial Temperature  
• SOIC Package  
• RoHS Compliance  
Logic Block Diagram  
V
CC  
V
CAP  
Quantum Trap  
512 X 512  
POWER  
CONTROL  
A5  
STORE  
A6  
A7  
A8  
RECALL  
STORE/  
RECALL  
CONTROL  
STATIC RAM  
ARRAY  
HSB  
A9  
A11  
A12  
A13  
A14  
512 X 512  
SOFTWARE  
DETECT  
A13  
-
A0  
DQ0  
COLUMN I/O  
DQ1  
DQ2  
DQ3  
COLUMN DEC  
DQ4  
DQ5  
DQ6  
DQ7  
A0  
A4  
A10  
A1  
A3  
A2  
OE  
CE  
WE  
Cypress Semiconductor Corporation  
Document #: 001-06968 Rev. *C  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised November 28, 2006  
[+] Feedback  

CY14E256L-SZ25XCT 替代型号

型号 品牌 替代类型 描述 数据表
STK14C88-NF25 CYPRESS

完全替代

32 K x 8 AutoStore nvSRAM Commercial, industrial, military temperatures
STK14C88-NF25TR CYPRESS

完全替代

32 K x 8 AutoStore nvSRAM Commercial, industrial, military temperatures
CY14E256LA-SZ25XI CYPRESS

类似代替

256 Kbit (32K x 8) nvSRAM

与CY14E256L-SZ25XCT相关器件

型号 品牌 获取价格 描述 数据表
CY14E256L-SZ25XI CYPRESS

获取价格

256 Kbit (32K x 8) nvSRAM
CY14E256L-SZ25XIT CYPRESS

获取价格

256 Kbit (32K x 8) nvSRAM
CY14E256L-SZ35XC CYPRESS

获取价格

256 Kbit (32K x 8) nvSRAM
CY14E256L-SZ35XCT CYPRESS

获取价格

256 Kbit (32K x 8) nvSRAM
CY14E256L-SZ35XI CYPRESS

获取价格

256 Kbit (32K x 8) nvSRAM
CY14E256L-SZ35XIT CYPRESS

获取价格

256 Kbit (32K x 8) nvSRAM
CY14E256L-SZ45XC CYPRESS

获取价格

256 Kbit (32K x 8) nvSRAM
CY14E256L-SZ45XCT CYPRESS

获取价格

256-Kbit (32K x 8) nvSRAM
CY14E256L-SZ45XI CYPRESS

获取价格

256 Kbit (32K x 8) nvSRAM
CY14E256L-SZ45XIT CYPRESS

获取价格

256 Kbit (32K x 8) nvSRAM