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CY14MB064J1A PDF预览

CY14MB064J1A

更新时间： 2024-02-04 08:48:15
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器
页数 文件大小 规格书
28页 1034K
描述
64-Kbit (8 K × 8) Serial (I2C) nvSRAM

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中文翻译

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CY14MB064J1A 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：SOIC
包装说明：SOP, SOP8,.25针数：8
Reach Compliance Code：compliantECCN代码：3A991.B.2.A
HTS代码：8542.32.00.41风险等级：5.82
Is Samacsys：NJESD-30 代码：R-PDSO-G8
JESD-609代码：e4长度：4.889 mm
内存密度：65536 bit内存集成电路类型：NON-VOLATILE SRAM
内存宽度：8湿度敏感等级：3
功能数量：1端子数量：8
字数：8192 words字数代码：8000
工作模式：SYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：8KX8
封装主体材料：PLASTIC/EPOXY封装代码：SOP
封装等效代码：SOP8,.25封装形状：RECTANGULAR
封装形式：SMALL OUTLINE并行/串行：SERIAL
峰值回流温度（摄氏度）：260电源：3 V
认证状态：Not Qualified座面最大高度：1.727 mm
最大待机电流：0.00015 A子类别：SRAMs
最大压摆率：0.003 mA最大供电电压 (Vsup)：3.6 V
最小供电电压 (Vsup)：2.7 V标称供电电压 (Vsup)：3 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式：GULL WING端子节距：1.27 mm
端子位置：DUAL处于峰值回流温度下的最长时间：20
宽度：3.8985 mmBase Number Matches：1

CY14MB064J1A 数据手册

 浏览型号CY14MB064J1A的Datasheet PDF文件第2页浏览型号CY14MB064J1A的Datasheet PDF文件第3页浏览型号CY14MB064J1A的Datasheet PDF文件第4页浏览型号CY14MB064J1A的Datasheet PDF文件第5页浏览型号CY14MB064J1A的Datasheet PDF文件第6页浏览型号CY14MB064J1A的Datasheet PDF文件第7页 
CY14MB064J1A/CY14MB064J2A  
CY14ME064J1A/CY14ME064J2A  
PRELIMINARY  
64-Kbit (8 K × 8) Serial (I2C) nvSRAM  
64-Kbit (8  
K × 8) Serial (I2C) nvSRAM  
■ Industry standard configurations  
❐ Operating voltages:  
• CY14MB064J: VCC = 2.7 V to 3.6 V  
• CY14ME064J: VCC = 4.5 V to 5.5 V  
❐ Industrial temperature  
Features  
■ 64-Kbit nonvolatile static random access memory (nvSRAM)  
❐ Internally organized as 8 K × 8  
❐ STORE to QuantumTrap nonvolatile elements initiated  
automatically on power-down (AutoStore) or by using I2C  
command (Software STORE)  
❐ 8-pin small outline integrated circuit (SOIC) package  
❐ Restriction of hazardous substances (RoHS) compliant  
❐ RECALL to SRAM initiated on power-up (Power-Up  
RECALL) or by I2C command (Software RECALL)  
Overview  
❐ Automatic STORE on power-down with a small capacitor  
(except for CY14MX064J1A)  
The Cypress CY14MX064J combines a 64-Kbit nvSRAM[1] with  
a nonvolatile element in each memory cell. The memory is  
organized as 8 K words of 8 bits each. The embedded  
nonvolatile elements incorporate the QuantumTrap technology,  
creating the world’s most reliable nonvolatile memory. The  
SRAM provides infinite read and write cycles, while the  
QuantumTrap cells provide highly reliable nonvolatile storage of  
data. Data transfers from SRAM to the nonvolatile elements  
(STORE operation) takes place automatically at power-down  
(except for CY14MX064J1A). On power-up, data is restored to  
the SRAM from the nonvolatile memory (RECALL operation).  
The STORE and RECALL operations can also be initiated by the  
user through I2C commands.  
■ High reliability  
❐ Infinite read, write, and RECALL cycles  
❐ 1 million STORE cycles to QuantumTrap  
❐ Data retention: 20 years at 85 C  
■ High speed I2C interface  
❐ Industry standard 100 kHz and 400 kHz speed  
❐ Fast-mode Plus: 1 MHz speed  
❐ High speed: 3.4 MHz  
❐ Zero cycle delay reads and writes  
■ Write protection  
❐ Hardware protection using Write Protect (WP) pin  
❐ Software block protection for 1/4, 1/2, or entire array  
■ I2C access to special functions  
❐ Nonvolatile STORE/RECALL  
❐ 8 byte serial number  
❐ Manufacturer ID and Product ID  
❐ Sleep mode  
Configuration  
Feature  
AutoStore  
Software STORE  
CY14MX064J1A  
CY14MX064J2A  
No  
Yes  
Yes  
Yes  
A2, A1  
Slave Address pins  
A2, A1, A0  
■ Low power consumption  
❐ Average active current of 1 mA at 3.4 MHz operation  
❐ Average standby mode current of 120 µA  
❐ Sleep mode current of 8 µA  
Logic Block Diagram  
Serial Number  
8 x 8  
VCC VCAP  
Manufacturer ID /  
Product ID  
Power Control  
Block  
Memory Control Register  
Command Register  
Quantum Trap  
8 K x 8  
Sleep  
STORE  
SRAM  
8 K x 8  
Control Registers Slave  
Memory Slave  
SDA  
SCL  
A2, A1, A0  
WP  
I2C Control Logic  
Slave Address  
Decoder  
Memory  
Address and Data  
Control  
RECALL  
Note  
2
1. Serial (I C) nvSRAM is referred to as nvSRAM throughout the datasheet.  
Cypress Semiconductor Corporation  
Document Number: 001-70393 Rev. *E  
•
198 Champion Court  
•
San Jose, CA 95134-1709  
•
408-943-2600  
Revised August 3, 2012  
1234567...28

中文翻译

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