Datasheet > CY14E256Q2A-SXIT

CY14E256Q2A-SXIT

更新时间： 2024-01-01 12:25:14

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		静态存储器光电二极管内存集成电路
页数	文件大小	规格书
33页	1931K
描述
Non-Volatile SRAM, 32KX8, CMOS, PDSO8, 0.150 INCH, ROHS COMPLIANT, MS-012, SOIC-8

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技术参数
数据手册

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CY14E256Q2A-SXIT 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	SOP,	Reach Compliance Code：	compliant
ECCN代码：	3A991.B.2.A	HTS代码：	8542.32.00.41
风险等级：	5.75	JESD-30 代码：	R-PDSO-G8
JESD-609代码：	e4	长度：	4.889 mm
内存密度：	262144 bit	内存集成电路类型：	NON-VOLATILE SRAM
内存宽度：	8	湿度敏感等级：	3
功能数量：	1	端子数量：	8
字数：	32768 words	字数代码：	32000
工作模式：	SYNCHRONOUS	最高工作温度：	85 °C
最低工作温度：	-40 °C	组织：	32KX8
封装主体材料：	PLASTIC/EPOXY	封装代码：	SOP
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
并行/串行：	SERIAL	峰值回流温度（摄氏度）：	260
座面最大高度：	1.727 mm	最大供电电压 (Vsup)：	5.5 V
最小供电电压 (Vsup)：	4.5 V	标称供电电压 (Vsup)：	5 V
表面贴装：	YES	技术：	CMOS
温度等级：	INDUSTRIAL	端子面层：	Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式：	GULL WING	端子节距：	1.27 mm
端子位置：	DUAL	处于峰值回流温度下的最长时间：	20
宽度：	3.8985 mm	Base Number Matches：	1

CY14E256Q2A-SXIT 数据手册

CY14C256Q

CY14B256Q

CY14E256Q

256-Kbit (32 K × 8) SPI nvSRAM

256-Kbit (32

K × 8) SPI nvSRAM

■ Industry standard configurations

❐ Operating voltages:

Features

■ 256-Kbit nonvolatile static random access memory (nvSRAM)

• CY14C256Q: V_CC= 2.4 V to 2.6 V

• CY14B256Q: V_CC= 2.7 V to 3.6 V

• CY14E256Q: V_CC= 4.5 V to 5.5 V

❐ Industrial temperature

❐ 8- and 16-pin small outline integrated circuit (SOIC) package

❐ Restriction of hazardous substances (RoHS) compliant

internally organized as 32 K × 8

❐ STORE to QuantumTrap nonvolatile elements initiated

automatically on power-down (AutoStore) or by using SPI

instruction (Software STORE) or HSB pin (Hardware

STORE)

❐ RECALL to SRAM initiated on power-up (Power-Up

RECALL) or by SPI instruction (Software RECALL)

Functional Overview

❐ Support automatic STORE on power-down with a small

capacitor (except for CY14X256Q1A)

The Cypress CY14X256Q combines a 256-Kbit nvSRAM^[1]with

a nonvolatile element in each memory cell with serial SPI

interface. The memory is organized as 32 K words of 8 bits each.

The embedded nonvolatile elements incorporate the

QuantumTrap technology, creating the world’s most reliable

nonvolatile memory. The SRAM provides infinite read and write

cycles, while the QuantumTrap cells provide highly reliable

nonvolatile storage of data. Data transfers from SRAM to the

nonvolatile elements (STORE operation) takes place

automatically at power-down (except for CY14X256Q1A). On

power-up, data is restored to the SRAM from the nonvolatile

memory (RECALL operation). You can also initiate the STORE

and RECALL operations through SPI instruction.

■ High reliability

❐ Infinite read, write, and RECALL cycles

❐ 1million STORE cycles to QuantumTrap

❐ Data retention: 20 years at 85 C

■ 40 MHz and 104 MHz High speed serial peripheral interface

(SPI)

❐ 40 MHz clock rate SPI write and read with zero cycle delay

❐ 104 MHz clock rate SPI write and SPI read (with special fast

read instructions)

❐ Supports SPI mode 0 (0,0) and mode 3 (1,1)

■ SPI access to special functions

❐ Nonvolatile STORE/RECALL

❐ 8-byte serial number

❐ Manufacturer ID and Product ID

❐ Sleep mode

For a complete list of related documentation, click here.

Configuration

Feature CY14X256Q1A CY14X256Q2A CY14X256Q3A

■ Write protection

AutoStore

Yes

❐ Hardware protection using Write Protect (WP) pin

❐ Software protection using Write Disable instruction

❐ Software block protection for 1/4, 1/2, or entire array

Software

STORE

Yes

Hardware

STORE

Yes

■ Low power consumption

❐ Average active current of 3 mA at 40 MHz operation

❐ Average standby mode current of 150 A

❐ Sleep mode current of 8 A

Logic Block Diagram

V_CCV_CAP

Serial Number

8 x 8

Power Control

Block

Manufacturer ID /

Product ID

QuantumTrap

32 K x 8

SLEEP

STORE

SRAM

32 K x 8

RDSN/WRSN/RDID

READ/WRITE

STORE/RECALL/ASENB/ASDISB

Memory

RECALL

Data &

Address

Control

SPI Control Logic

Write Protection

Instruction decoder

SCK

WRSR/RDSR/WREN

Status Register

Note

1. This device will be referred to as nvSRAM throughout the document.

Cypress Semiconductor Corporation

Document Number: 001-65282 Rev. *I

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised November 12, 2014

12 3 4 5 6 7...33

中文翻译

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与CY14E256Q2A-SXIT相关器件

型号	品牌	获取价格	描述	数据表
CY14E256Q5A-SXQ	INFINEON	获取价格	nvSRAM (non-volatile SRAM)
CY14E256Q5A-SXQT	INFINEON	获取价格	nvSRAM (non-volatile SRAM)
CY14E512I	CYPRESS	获取价格	512-Kbit (64 K x 8) Serial (I2C) nvSRAM with Real Time Clock
CY14E512J	CYPRESS	获取价格	512-Kbit (64 K x 8) Serial (I2C) nvSRAM Infinite read, write, and RECALL cycles
CY14E512PA	CYPRESS	获取价格	512-Kbit (64 K x 8) SPI nvSRAM with Real Time Clock Full-featured RTC
CY14E512Q	CYPRESS	获取价格	512-Kbit (64 K x 8) SPI nvSRAM Infinite read, write, and RECALL cycles
CY14MB064J	CYPRESS	获取价格	64-Kbit (8 K x 8) Serial (I2C) nvSRAM Nonvolatile STORE/RECALL
CY14MB064J_12	CYPRESS	获取价格	64-Kbit (8 K Ã 8) Serial (I2C) nvSRAM
CY14MB064J_13	CYPRESS	获取价格	64-Kbit (8 K x 8) Serial (I2C) nvSRAM
CY14MB064J1A	CYPRESS	获取价格	64-Kbit (8 K Ã 8) Serial (I2C) nvSRAM

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