生命周期: | Active | 零件包装代码: | TO-220AB |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.26 | 外壳连接: | ISOLATED |
集电极-发射极最大电压: | 400 V | 配置: | SINGLE |
门极发射器阈值电压最大值: | 7 V | 门极-发射极最大电压: | 30 V |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
CT30VM8 | ETC |
获取价格 |
TRANSISTOR | IGBT | N-CHAN | 400V V(BR)CES | 180A I(C) | TO-221 | |
CT30VM-8 | POWEREX |
获取价格 |
STROBE FLASHER USE | |
CT30VM-8 | MITSUBISHI |
获取价格 |
STROBE FLASHER USE | |
CT30VM-8 | RENESAS |
获取价格 |
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR | |
CT30VS8 | ETC |
获取价格 |
TRANSISTOR | IGBT | N-CHAN | 400V V(BR)CES | 180A I(C) | TO-221 | |
CT30VS-8 | MITSUBISHI |
获取价格 |
STROBE FLASHER USE | |
CT30VS-8 | POWEREX |
获取价格 |
STROBE FLASHER USE | |
CT30VS-8 | RENESAS |
获取价格 |
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR | |
CT30VS-8-T1 | MITSUBISHI |
获取价格 |
Insulated Gate Bipolar Transistor, 400V V(BR)CES, N-Channel, TO-220S, 3 PIN | |
CT30VS-8-T2 | MITSUBISHI |
获取价格 |
Insulated Gate Bipolar Transistor, 400V V(BR)CES, N-Channel, TO-220S, 3 PIN |