CT30VM-8

更新时间： 2024-11-05 22:08:31

品牌	Logo	应用领域
三菱 - MITSUBISHI		/
页数	文件大小	规格书
2页	27K
描述
STROBE FLASHER USE

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中文翻译

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数据手册
替代型号

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CT30VM-8 数据手册

MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR

CT30VM-8

STROBE FLASHER USE

CT30VM-8

OUTLINE DRAWING

Dimensions in mm

10.5MAX.

1.3

0.5

2.5

w r

q GATE

w COLLECTOR

e EMITTER

r COLLECTOR

¡VCES ................................................................................400V

¡ICM ....................................................................................180A

TO-220C

APPLICATION

Strobe Flasher.

MAXIMUM RATINGS (Tc = 25°C)

Symbol

VCES

VGES

VGEM

ICM

Parameter

Conditions

Ratings

400

Unit

Collector-emitter voltage

Gate-emitter voltage

VGE = 0V

VCE = 0V, See notice 4

VCE = 0V, tw = 0.5s

See figure 1

±30

Peak gate-emitter voltage

Collector current (Pulsed)

Junction temperature

Storage temperature

±40

180

–40 ~ +150

°C

Tstg

ELECTRICAL CHARACTERISTICS (Tj = 25°C)

Symbol Parameter

Limits

Typ.

—

Test conditions

Unit

Min.

Max.

—

V(BR)CES Collector-emitter breakdown voltage IC = 1mA, VGE = 0V

450

—

µA

ICES

Collector-emitter leakage current VCE = 400V, VGE = 0V

Gate-emitter leakage current VGE = ±40V, VCE = 0V

Gate-emitter threshold voltage VCE = 10V, IC = 1mA

—

IGES

—

±0.1

7.0

VGE(th)

—

Feb.1999

中文翻译

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CT30VM-8 替代型号

型号	品牌	替代类型	描述	数据表
GT10G101	TOSHIBA	功能相似	TRANSISTOR 10 A, 400 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
GT15G101	TOSHIBA	功能相似	N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
GT20G101	TOSHIBA	功能相似	N CHANNEL IGBT (STROBE FLASH APPLICATIONS)

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