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CSA1015 PDF预览

CSA1015

更新时间: 2024-09-09 23:14:31
品牌 Logo 应用领域
CDIL 晶体小信号双极晶体管局域网
页数 文件大小 规格书
4页 88K
描述
PNP EPITAXIAL PLANAR SILICON TRANSISTOR

CSA1015 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:compliant
风险等级:5.75最大集电极电流 (IC):0.15 A
配置:SINGLE最小直流电流增益 (hFE):25
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:PNP
最大功率耗散 (Abs):0.4 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管元件材料:SILICON标称过渡频率 (fT):80 MHz
Base Number Matches:1

CSA1015 数据手册

 浏览型号CSA1015的Datasheet PDF文件第2页浏览型号CSA1015的Datasheet PDF文件第3页浏览型号CSA1015的Datasheet PDF文件第4页 
Continental Device India Limited  
An ISO/TS16949 and ISO 9001 Certified Company  
PNP EPITAXIAL PLANAR SILICON TRANSISTOR  
CSA1015  
TO-92  
Plastic Package  
B
C
E
Audio Frequency General Purpose and Driver Stage Amplifier Applications.  
Complementary CSC1815  
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)  
DESCRIPTION  
SYMBOL  
VALUE  
UNITS  
V
VCBO  
Collector Base Voltage  
Collector Emitter Voltage  
Emitter Base Voltage  
Collector Current Continuous  
Base Current  
50  
VCEO  
VEBO  
IC  
50  
V
5
150  
V
mA  
mA  
mW  
ºC  
IB  
50  
PC  
Collector Power Dissipation  
625  
Tj, Tstg  
-55 to +125  
Operating And Storage Junction  
Temperature Range  
THERMAL RESISTANCE  
Junction to case  
Rth(j-c)  
250  
ºC/W  
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)  
DESCRIPTION  
SYMBOL TEST CONDITION  
MIN  
TYP  
MAX  
100  
100  
400  
UNITS  
nA  
ICBO  
VCB =50V, IE=0  
Collector Cut off Current  
Emitter Cut off Current  
DC Current Gain  
IEBO  
VEB=5V, IC = 0  
nA  
*hFE  
IC =2mA, VCE=6V  
IC =150mA, VCE=6V  
IC=100mA,IB= 10mA  
IC=100mA,IB= 10mA  
70  
25  
hFE  
VCE(sat)  
VBE(sat)  
Collector Emitter Saturation Voltage  
Base Emitter Saturation Voltage  
0.30  
1.1  
V
V
DYNAMIC CHARACTERISTICS  
Transition Frequency  
VCE=10V, IC=1mA,  
f=100MHz  
VCB=10V,IE=0,  
ft  
80  
MHz  
pF  
Cob  
7.0  
10  
Collector Output Capacitance  
Base Spreading Resistance  
Noise Figure  
f=1MHz  
VCB=10V, IE=1mA,  
f=30MHz  
rbb'  
NF  
30  
W
VCE=6V, IC=0.1mA,  
dB  
Rg=10Kohms, f=1KHz  
GR  
200 - 400  
CLASSIFICATION  
*hFE  
O
Y
70 - 140  
120 - 240  
CSA1015REV_5 281202D  
Datasheet  
Continental Device India Limited  
Page 1 of 4  

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Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, PNP, Silicon, TO-92, PLASTIC, TO-9