Datasheet > CSA1162GR-3F

CSA1162GR-3F

更新时间： 2024-11-04 23:43:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	41K
描述
TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 150MA I(C) \| SOT-23

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中文翻译

获取价格

数据手册

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CSA1162GR-3F 数据手册

IS / IECQC 700000

IS / IECQC 750100

IS/ISO 9002

Lic# QSC/L- 000019.2

Continental Device India Limited

An IS/ISO 9002 and IECQ Certified Manufacturer

SOT-23 Formed SMD Package

CSA1162

LOW FREQUENCY GENERAL PURPOSE AMPLIFIER TRANSISTOR

P-N-P transistor

Marking

PACKAGE OUTLINE DETAILS

ALL DIMENSIONS IN mm

CSA1162Y–3E

CSA1162GR(G)–3F

Pin configuration

1 = BASE

2 = EMITTER

3 = COLLECTOR

ABSOLUTE MAXIMUM RATINGS

Collector-base voltage (open emitter)

Collector-emitter voltage (open base)

Emitter-base voltage (open collector)

Collector current (d.c.)

–V

max.

50 V

5 V

150 mA

150 mW

150 ° C

CBO

CEO

EBO

–I

Total power dissipation at T

Junction temperature

D.C. current gain

= 25°C

amb

tot

–I = 2 mA; –V

= 6V

min.

max.

400

RATINGS (at T = 25°C unless otherwise specified)

Limiting values

Collector-base voltage (open emitter)

Collector-emitter voltage (open base)

Emitter-base voltage (open collector)

Collector current (d.c.)

–V

max.

50 V

5 V

150 mA

30 mA

CBO

CEO

EBO

–I

Base current

Continental Device India Limited

Data Sheet

Page 1 of 2

12 3

中文翻译

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CSA1220A	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 160V V(BR)CEO \| 1.2A I(C) \| TO-126
CSA1220AO	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 160V V(BR)CEO \| 1.2A I(C) \| TO-126
CSA1220AR	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 160V V(BR)CEO \| 1.2A I(C) \| TO-126
CSA1220AY	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 160V V(BR)CEO \| 1.2A I(C) \| TO-126
CSA1220O	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 120V V(BR)CEO \| 1.2A I(C) \| TO-126