CSA1015GR

更新时间： 2024-09-13 23:14:31

品牌	Logo	应用领域
CDIL		晶体晶体管局域网
页数	文件大小	规格书
4页	88K
描述
PNP EPITAXIAL PLANAR SILICON TRANSISTOR

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中文翻译

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数据手册

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CSA1015GR 数据手册

Continental Device India Limited

An ISO/TS16949 and ISO 9001 Certified Company

PNP EPITAXIAL PLANAR SILICON TRANSISTOR

CSA1015

TO-92

Plastic Package

Audio Frequency General Purpose and Driver Stage Amplifier Applications.

Complementary CSC1815

ABSOLUTE MAXIMUM RATINGS (T_a=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

VALUE

UNITS

V_CBO

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current Continuous

Base Current

V_CEO

V_EBO

I_C

150

ºC

I_B

P_C

Collector Power Dissipation

625

T_j, T_stg

-55 to +125

Operating And Storage Junction

Temperature Range

THERMAL RESISTANCE

Junction to case

R_th(j-c)

250

ºC/W

ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL TEST CONDITION

MIN

TYP

MAX

100

400

UNITS

I_CBO

V_CB=50V, I_E=0

Collector Cut off Current

Emitter Cut off Current

DC Current Gain

I_EBO

V_EB=5V, I_C= 0

*h_FE

I_C=2mA, V_CE=6V

I_C=150mA, V_CE=6V

I_C=100mA,I_B= 10mA

h_FE

V_CE(sat)

V_BE(sat)

Collector Emitter Saturation Voltage

Base Emitter Saturation Voltage

0.30

1.1

DYNAMIC CHARACTERISTICS

Transition Frequency

V_CE=10V, I_C=1mA,

f=100MHz

V_CB=10V,I_E=0,

MHz

C_ob

7.0

Collector Output Capacitance

Base Spreading Resistance

Noise Figure

f=1MHz

V_CB=10V, I_E=1mA,

f=30MHz

rbb'

V_CE=6V, I_C=0.1mA,

R_g=10Kohms, f=1KHz

200 - 400

CLASSIFICATION

*h_FE

70 - 140

120 - 240

CSA1015REV_5 281202D

Datasheet

Continental Device India Limited

Page 1 of 4

12 3 4

中文翻译

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