Silicon N-Channel Power MOSFET
CS20N60 A8R
R
○
General Description:
VDSS
600
20
V
A
CS20N60 A8R the silicon N-channel Enhanced
VDMOSFET, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220AB, which accords with the RoHS standard.
Features:
ID
PD(TC=25℃)
RDS(ON)Typ
250
0.35
W
Ω
l Fast Switching
l Low ON Resistance(Rdson≤0.45Ω)
l Low Gate Charge (Typical Data:57nC)
l Low Reverse transfer capacitances(Typical:23pF)
l 100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of adaptor and charger.
Absolute(Tc= 25℃ unless otherwise specified):
Parameter
Symbol
VDSS
Rating
Units
Drain-to-Source Voltage
600
V
A
Continuous Drain Current
20
ID
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
12.5
A
a1
80
A
IDM
Gate-to-Source Voltage
VGS
V
±30
a2
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
1200
mJ
V/ns
W
EAS
a3
5.0
dv/dt
250
PD
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
2
150,–55 to 150
300
W/℃
℃
TJ,Tstg
TL
℃
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2020V01