Datasheet > CS20N60ANH

CS20N60ANH

更新时间： 2024-03-03 10:11:17

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	326K
描述
TO-3P

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CS20N60ANH 数据手册

Silicon N-Channel Power MOSFET

○

CS20N60 ANH

V_DSS

600

General Description：

I_D

CS20N60 ANH, the silicon N-channel Enhanced

VDMOSFETs, is obtained by the self-aligned planar Technology

which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. The transistor can

be used in various power switching circuit for system

miniaturization and higher efficiency. The package form is

TO-3P(N), which accords with the RoHS standard..

Features：

P_D(T_C=25℃)

R_DS(ON)Typ

250

0.36

Ω

l Fast Switching

l Low ON Resistance(Rdson≤0.45Ω)

l Low Gate Charge (Typical Data:61nC)

l Low Reverse transfer capacitances(Typical: 20pF)

l 100% Single Pulse avalanche energy Test

Applications：

Power switch circuit of adaptor and charger.

Absolute（Tc= 25℃ unless otherwise specified）：

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

600

Continuous Drain Current

I_D

Continuous Drain Current T_C= 100 °C

Pulsed Drain Current

I_DM

Gate-to-Source Voltage

V_GS

±30

Single Pulse Avalanche Energy

Avalanche Energy ,Repetitive

Avalanche Current

1200

E_AS

100

E_AR

4.5

I_AR

Peak Diode Recovery dv/dt

Power Dissipation

5.0

V/ns

dv/dt

250

P_D

Derating Factor above 25°C

Operating Junction and Storage Temperature Range

Maximum Temperature for Soldering

2.0

150，–55 to 150

300

W/℃

℃

T_J，T_stg

T_L

℃

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.

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