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CS20N90ANR PDF预览

CS20N90ANR

更新时间: 2024-04-09 19:02:06
品牌 Logo 应用领域
华润微 - CRMICRO /
页数 文件大小 规格书
10页 405K
描述
TO-3P(N)

CS20N90ANR 数据手册

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R
Silicon N-Channel Power MOSFET  
CS20N90 ANR  
General Description  
VDSS  
900  
V
A
ID  
20  
CS20N90 ANR, the silicon N-channel Enhanced  
VDMOSFETs, is obtained by the self-aligned planar Technology  
which reduce the conduction loss, improve switching  
performance and enhance the avalanche energy. The transistor can  
be used in various power switching circuit for system  
miniaturization and higher efficiency. The package form is TO-3P  
N, which accords with the RoHS standard..  
PD (TC=25)  
RDS(ON)Typ  
250  
0.28  
W
Features  
l Fast Switching  
l Low ON Resistance(Rdson0.40)  
l Low Gate Charge (Typical Data: 140.5nC)  
l Low Reverse transfer capacitances(Typical: 18.3pF)  
l 100% Single Pulse avalanche energy Test  
Applications:  
Power switch circuit of electron ballast and adaptor.  
AbsoluteTc= 25unless otherwise specified:  
Parameter  
Symbol  
VDSS  
Rating  
900  
Units  
V
Drain-to-Source Voltage  
Continuous Drain Current  
Continuous Drain Current TC = 100 °C  
Pulsed Drain Current  
20  
A
ID  
12.5  
80  
A
a1  
A
IDM  
Gate-to-Source Voltage  
VGS  
V
±30  
a2  
Single Pulse Avalanche Energy  
Peak Diode Recovery dv/dt  
Power Dissipation  
850  
5.0  
250  
2
mJ  
V/ns  
W
EAS  
a3  
dv/dt  
PD  
Derating Factor above 25°C  
W/℃  
Operating Junction and Storage Temperature Range  
Maximum Temperature for Soldering  
TJTstg  
15055 to 150  
300  
TL  
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.  
Page 1 of 10  
2018V01  

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