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CS20N65FA9H

更新时间: 2024-03-03 10:07:36
品牌 Logo 应用领域
华润微 - CRMICRO /
页数 文件大小 规格书
10页 311K
描述
TO-220F

CS20N65FA9H 数据手册

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Silicon N-Channel Power MOSFET  
R
CS20N65F A9H  
VDSS  
650  
20  
V
A
General Description  
ID  
CS20N65F A9H, the silicon N-channel Enhanced  
VDMOSFETs, is obtained by the self-aligned planar Technology  
which reduce the conduction loss, improve switching  
performance and enhance the avalanche energy. The transistor  
can be used in various power switching circuit for system  
miniaturization and higher efficiency. The package form is  
TO-220F, which accords with the RoHS standard..  
Features  
PD(TC=25)  
RDS(ON)Typ  
85  
W
0.37  
l Fast Switching  
l Low ON Resistance(Rdson0.5  
)  
l Low Gate Charge (Typical Data:65nC)  
l Low Reverse transfer capacitances(Typical: 20pF)  
l 100% Single Pulse avalanche energy Test  
Applications:  
Power switch circuit of adaptor and charger.  
AbsoluteTc= 25unless otherwise specified:  
Parameter  
Symbol  
VDSS  
Rating  
Units  
Drain-to-Source Voltage  
650  
V
A
Continuous Drain Current  
20  
ID  
Continuous Drain Current TC = 100 °C  
Pulsed Drain Current  
14  
A
a1  
80  
A
IDM  
Gate-to-Source Voltage  
VGS  
±30  
V
a2  
Single Pulse Avalanche Energy  
Avalanche Energy ,Repetitive  
Avalanche Current  
550  
mJ  
mJ  
A
EAS  
a1  
50  
EAR  
a1  
3.2  
IAR  
a3  
Peak Diode Recovery dv/dt  
Power Dissipation  
5.0  
V/ns  
W
dv/dt  
85  
0.68  
PD  
Derating Factor above 25°C  
Operating Junction and Storage Temperature Range  
Maximum Temperature for Soldering  
W/℃  
TJTstg  
15055 to 150  
300  
TL  
WUXI CHINA RESOURCES HUAJING MICROELEC TRONICS CO. , LTD.  
Page 1 of 10  
2015V01  

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