Datasheet > CS20N50A0R

CS20N50A0R

更新时间： 2024-03-03 10:09:54

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	343K
描述
TO-263

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

CS20N50A0R 数据手册

Silicon N-Channel Power MOSFET

CS20N50 A0R

○

General Description：

V_DSS

500

CS20N50 A0R the silicon N-channel Enhanced

VDMOSFET, is obtained by the self-aligned planar Technology

which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system

miniaturization and higher efficiency. The package form is TO-263,

which accords with the RoHS standard.

I_D

P_D(T_C=25℃)

R_DS(ON)Typ

260

0.24

Ω

Features：

l Fast Switching

l Low ON Resistance(Rdson≤0.3Ω)

l Low Gate Charge (Typical Data:52nC)

l Low Reverse transfer capacitances(Typical:16pF)

l 100% Single Pulse avalanche energy Test

Applications：

Power switch circuit of adaptor and charger.

Absolute（T_J= 25℃ unless otherwise specified）：

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

500

Continuous Drain Current T_C= 25 °C

Continuous Drain Current T_C= 100 °C

Pulsed Drain Current T_C= 25 °C

Gate-to-Source Voltage

I_D

12.5

I_DM

V_GS

±30

Single Pulse Avalanche Energy

Peak Diode Recovery dv/dt

1200

V/ns

E_AS

5.0

260

dv/dt

Power Dissipation T_C= 25 °C

Derating Factor above 25°C

P_D

2.08

W/℃

℃

Operating Junction and Storage Temperature Range

T_J，T_stg

150，–55 to 150

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10

2019V01

12 3 4 5 6 7...10

下载PDF

与CS20N50A0R相关器件

型号	品牌	描述	获取价格	数据表
CS20N50A8H	CRMICRO	TO-220	获取价格
CS20N50A8R	CRMICRO	TO-220	获取价格
CS20N50ANH	CRMICRO	TO-3P	获取价格
CS20N50ANR	CRMICRO	TO-3P	获取价格
CS20N50FA9R	CRMICRO	TO-220F	获取价格
CS20N60	ETC	3.3V, Low Power, 30Mbps, RS-485/RS-422 Transceiver	获取价格