Datasheet > CS13N03AE

CS13N03AE

更新时间： 2024-10-29 15:19:43

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	397K
描述
SOP-8

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数据手册

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CS13N03AE 数据手册

Silicon N-Channel Power MOSFET

CS13N03 AE

○

General Description：

V_DSS

CS13N03 AE, the silicon N-channel Enhanced

VDMOSFETs, is obtained by advanced Trench Technology

which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. The transistor can

be used in various power switching circuit for system

I_D

R_DS(ON)Typ

8.3

mΩ

miniaturization and higher efficiency. The package form is SOP8

which accords with the RoHS standard.

Features：

l Fast Switching

l Low ON Resistance^(Rdson≤10mΩ)

l Low Gate Charge

l Low Reverse transfer capacitances

l 100% Single Pulse avalanche energy Test

Applications：

Power switch circuit of adaptor and charger.

Absolute（Ta= 25℃ unless otherwise specified）：

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

Continuous Drain Current

I_D

Continuous Drain Current Ta = 100 °C

Pulsed Drain Current

8.4

I_DM

P_D

Power Dissipation

2.5

±20

Gate-to-Source Voltage

V_GS

Single Pulse Avalanche Energy

Operating Junction and Storage Temperature Range

64.8

℃

E_AS

T_J，T_stg

150，–55 to 150

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10

2020V01

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