Silicon N-Channel Power MOSFET
CS13N10 AQ4-G
R
○
General Description:
VDSS
100
13
V
CS13N10 AQ4-G, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the high density Trench
technology which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. This device is
suitable for use as a load switch and PWM applications. The
package form is PDFN3.3*3.3, which accords with the Halogen
Free standard.
ID
A
W
PD
22.7
54
RDS(ON)Typ
mΩ
Features:
Fast Switching
Low ON Resistance(Rdson≤68 mΩ)
Low Gate Charge
Low Reverse transfer capacitances
100% Single Pulse avalanche energy Test
Halogen Free
Applications:
Power switch circuit of adaptor and charger.
Absolute(Tj= 25℃ unless otherwise specified)
Parameter
Symbol
VDSS
Rating
Units
Drain-to-Source Voltage
100
V
A
Continuous Drain Current TC = 25 °C
Continuous Drain Current TC = 100 °C
Pulsed Drain Current TC = 25 °C
Gate-to-Source Voltage
13
ID
8.6
A
a1
52
±20
A
IDM
VGS
V
a2
Avalanche Energy
46.9
mJ
W
EAS
Power Dissipation TC = 25 °C
Derating Factor above 25°C
22.7
PD
0.181
W/℃
℃
Operating Junction and Storage Temperature Range
TJ,Tstg
150,–55 to 150
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2020V01