Datasheet > CS13N50A8H

CS13N50A8H

更新时间： 2024-04-09 19:00:41

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	234K
描述
TO-220

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CS13N50A8H 数据手册

Silicon N-Channel Power MOSFET

○

CS13N50 A8H

V_DSS

500

General Description：

I_D

CS13N50 A8H, the silicon N-channel Enhanced

VDMOSFETs, is obtained by the self-aligned planar

Technology which reduce the conduction loss, improve

switching performance and enhance the avalanche energy. The

transistor can be used in various power switching circuit for system

miniaturization and higher efficiency. The package form is

TO-220AB, which accords with the RoHS standard.

Features：

P_D(T_C=25℃)

R_DS(ON)Typ

150

0.34

Ω

l Fast Switching

l Low ON Resistance(Rdson≤0.45Ω)

l Low Gate Charge (Typical Data:45nC)

l Low Reverse transfer capacitances(Typical:23pF)

l 100% Single Pulse avalanche energy Test

Applications：

Power switch circuit of adaptor and charger.

Absolute（Tc= 25℃ unless otherwise specified）：

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

500

Continuous Drain Current

I_D

Continuous Drain Current T_C= 100 °C

Pulsed Drain Current

I_DM

Gate-to-Source Voltage

V_GS

±30

Single Pulse Avalanche Energy

Avalanche Energy ,Repetitive

Avalanche Current

1100

E_AS

E_AR

4.0

I_AR

Peak Diode Recovery dv/dt

Power Dissipation

V/ns

dv/dt

150

P_D

Derating Factor above 25°C

Operating Junction and Storage Temperature Range

MaximumTemperature for Soldering

1.2

150，–55 to 150

300

W/℃

℃

T_J，T_stg

T_L

℃

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